Abstract: Provided is a manufacturing method of a photoelectric conversion panel including forming a photodiode in a frame region, forming a first wiring line overlapping a first portion in a plan view, the first wiring line connecting a TFT or a photodiode and the photodiode, forming a second wiring line not overlapping the first portion in a plan view and overlapping a second portion in the plan view, and forming a third portion between the first portion and the second portion. The third portion is a portion not overlapping the first wiring line and the second wiring line in a plan view. Thereafter, the manufacturing method of a photoelectric conversion panel includes dividing the photodiode and the substrate at the third portion.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

Abstract: An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

Abstract: In a manufacturing method of a photoelectric conversion panel, a contact hole CH3 that exposes a part of an upper face of a photodiode and a contact hole CH2 that exposes a source connection electrode are formed in a first flattening film and in inorganic insulating films 105a to 105c, an inorganic insulating film 107 is formed, contact holes CH2a and CH3a are formed in the contact holes CH2 and CH3, respectively, and a bias line and a data line are formed in the contact holes CH2a and CH3a, respectively.

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Abstract: According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; and a first inorganic insulating film formed so as to cover at least a part of the first organic film, wherein the first inorganic insulating film has a through hole that exposes a part of the first organic film.

Abstract: A photoelectric conversion panel includes multiple thin-film transistors (TFTs) formed on an substrate, photodiodes respectively connected to the TFTs, and a metal layer formed on a light incident side of the photodiodes. The metal layer is formed in a position to overlap a subset of the photodiodes in a plan view.

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Abstract: A photoelectric conversion panel includes: a substrate; a gate line and a data line formed on the substrate; a pixel transistor connected to the gate line and the data line; a photoelectric conversion element connected to the pixel transistor; an electro-static-discharge protection circuit formed on the substrate and connected to a ground; a depletion transistor for protection connected between either the gate line or the data line and the electro-static-discharge protection circuit; and an interrupting voltage supply line configured to apply an interrupting voltage to a gate electrode of the depletion transistor for protection.

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

Abstract: According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Abstract: An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Abstract: An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

Abstract: A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first inorganic insulating film 106, a first planarizing film 107, and a second inorganic insulating film 108a and/or 109 on a substrate 101. The first inorganic insulating film 106, the first planarizing film 107, and the second inorganic insulating film 108a and/or 109 are provided up to an end P2 of the substrate. The first inorganic insulating film 106 covers a surface of the photoelectric conversion element 12, the first planarizing film 107 has a tapered portion, and an angle ? between the tapered portion and the first inorganic insulating film 106 is an acute angle. The second inorganic insulating film 108a and/or 109 covers the first planarizing film 107.

Abstract: An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Abstract: An imaging panel includes an active matrix substrate that has a plurality of pixels each provided with a photoelectric conversion element, and the pixels each include a first electrode provided at a first surface of the photoelectric conversion element, a first flattening film provided above the photoelectric conversion element and the first electrode, and a bias conductive part provided below the first flattening film. The bias conductive part is connected to the first electrode and applies bias voltage to the first electrode. The first flattening film has no opening in a region overlapped with a pixel region.