Abstract: There is provided liquid discharging head including; channel member which includes plates stacked in a first direction and adhered to each other via adhesive, and in which individual channels each including nozzle and pressure chamber communicated with the nozzle is formed. The plates include first plate and second plate adhered to adhesion surface of the first plate via the adhesive. Hollows each construct one of the individual channels are opened in the adhesion surface. The hollows are arranged side by side in second direction orthogonal to the first direction in the adhesion surface, and three or more grooves are formed in the adhesion surface between two of the hollows adjacent to each other in the second direction, each of the three or more grooves extending in third direction which is orthogonal to the first direction and which crosses the second direction.

Abstract: There is provided liquid discharging head including; channel member which includes plates stacked in a first direction and adhered to each other via adhesive, and in which individual channels each including nozzle and pressure chamber communicated with the nozzle is formed. The plates include first plate and second plate adhered to adhesion surface of the first plate via the adhesive. Hollows each construct one of the individual channels are opened in the adhesion surface. The hollows are arranged side by side in second direction orthogonal to the first direction in the adhesion surface, and three or more grooves are formed in the adhesion surface between two of the hollows adjacent to each other in the second direction, each of the three or more grooves extending in third direction which is orthogonal to the first direction and which crosses the second direction.

Abstract: In a focus measurement method and a method of manufacturing a semiconductor device relating to the present invention, a focus value is obtained by using a fluctuation where shrinkage of a resist pattern by an electron beam irradiation depends upon the focus value. In the case of obtaining the focus value, the shrinkage of the resist pattern for a focus measurement formed by exposure to be subject for a focus value measurement is measured. The focus value corresponding to the shrinkage is obtained from the pre-obtained focal dependency of the shrinkage. A focal shift length can be defined from a difference between the focus value and a predetermined best focus value.

Abstract: In a focus measurement method and a method of manufacturing a semiconductor device relating to the present invention, a focus value is obtained by using a fluctuation where shrinkage of a resist pattern by an electron beam irradiation depends upon the focus value. In the case of obtaining the focus value, the shrinkage of the resist pattern for a focus measurement formed by exposure to be subject for a focus value measurement is measured. The focus value corresponding to the shrinkage is obtained from the pre-obtained focal dependency of the shrinkage. A focal shift length can be defined from a difference between the focus value and a predetermined best focus value.