Abstract: This invention relates to a semiconductor layer structure. The semiconductor layer structure described includes a substrate and a buffer layer deposited onto the substrate. The semiconductor layer structure is characterized in that a drain voltage threshold lower than the breakdown voltage threshold is determined by isolating ions that are selectively implanted in just one region of the substrate into the substrate, wherein charge can dissipate from the one contact through the buffer layer towards a substrate region without isolating ions, if the one potential deviates from the other at least by the drain voltage threshold, and wherein the substrate region without isolating ions is located underneath the one contact. The semiconductor layer structure described allows dissipation of currents induced by induction in blocking active structures without damaging the active structures.

Abstract: The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump.

Abstract: This invention relates to a semiconductor layer structure. The semiconductor layer structure described includes a substrate and a buffer layer deposited onto the substrate. The semiconductor layer structure is characterized in that a drain voltage threshold lower than the breakdown voltage threshold is determined by isolating ions that are selectively implanted in just one region of the substrate into the substrate, wherein charge can dissipate from the one contact through the buffer layer towards a substrate region without isolating ions, if the one potential deviates from the other at least by the drain voltage threshold, and wherein the substrate region without isolating ions is located underneath the one contact. The semiconductor layer structure described allows dissipation of currents induced by induction in blocking active structures without damaging the active structures.

Abstract: An overvoltage protection device for compound semiconductor field effect transistors includes an implanted region disposed in a compound semiconductor material. The implanted region has spatially distributed trap states which cause the implanted region to become electrically conductive at a threshold voltage. A first contact is connected to the implanted region. A second contact spaced apart from the first contact is also connected to the implanted region. The distance between the first and second contacts partly determines the threshold voltage of the overvoltage protection device.

Abstract: The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump.