Patents by Inventor Rimoon Agaiby

Rimoon Agaiby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD process
    Patent number: 10109492
    Abstract: One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400° C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: October 23, 2018
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Gabriela Dilliway, Dina Triyoso, Elke Erben, Rimoon Agaiby
  • METHOD OF FORMING A HIGH QUALITY INTERFACIAL LAYER FOR A SEMICONDUCTOR DEVICE BY PERFORMING A LOW TEMPERATURE ALD PROCESS
    Publication number: 20140242788
    Abstract: One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400° C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.
    Type: Application
    Filed: February 25, 2013
    Publication date: August 28, 2014
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Gabriela Dilliway, Dina Triyoso, Elke Erben, Rimoon Agaiby