Patents by Inventor Rina KADOWAKI
Rina KADOWAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250038135Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: ApplicationFiled: October 11, 2024Publication date: January 30, 2025Applicant: KIOXIA CORPORATIONInventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA
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Patent number: 12132013Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: GrantFiled: February 21, 2023Date of Patent: October 29, 2024Assignee: KIOXIA CORPORATIONInventors: Yusuke Akada, Rina Kadowaki, Hiroyuki Maeda
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Publication number: 20230197641Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: ApplicationFiled: February 21, 2023Publication date: June 22, 2023Applicant: KIOXIA CORPORATIONInventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA
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Patent number: 11610852Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: GrantFiled: October 28, 2021Date of Patent: March 21, 2023Assignee: Kioxia CorporationInventors: Yusuke Akada, Rina Kadowaki, Hiroyuki Maeda
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Publication number: 20220051995Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: ApplicationFiled: October 28, 2021Publication date: February 17, 2022Applicant: Kioxia CorporationInventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA
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Patent number: 11183469Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: GrantFiled: February 14, 2020Date of Patent: November 23, 2021Assignee: Kioxia CorporationInventors: Yusuke Akada, Rina Kadowaki, Hiroyuki Maeda
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Publication number: 20200185340Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.Type: ApplicationFiled: February 14, 2020Publication date: June 11, 2020Applicant: Kioxia CorporationInventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA
