Patents by Inventor Rina KADOWAKI

Rina KADOWAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20230197641
    Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.
    Type: Application
    Filed: February 21, 2023
    Publication date: June 22, 2023
    Applicant: KIOXIA CORPORATION
    Inventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA
  • Semiconductor device
    Patent number: 11610852
    Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.
    Type: Grant
    Filed: October 28, 2021
    Date of Patent: March 21, 2023
    Assignee: Kioxia Corporation
    Inventors: Yusuke Akada, Rina Kadowaki, Hiroyuki Maeda
  • SEMICONDUCTOR DEVICE
    Publication number: 20220051995
    Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.
    Type: Application
    Filed: October 28, 2021
    Publication date: February 17, 2022
    Applicant: Kioxia Corporation
    Inventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA
  • Semiconductor device
    Patent number: 11183469
    Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: November 23, 2021
    Assignee: Kioxia Corporation
    Inventors: Yusuke Akada, Rina Kadowaki, Hiroyuki Maeda
  • SEMICONDUCTOR DEVICE
    Publication number: 20200185340
    Abstract: A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Applicant: Kioxia Corporation
    Inventors: Yusuke AKADA, Rina KADOWAKI, Hiroyuki MAEDA