Abstract: A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.

Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

Abstract: A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.

Abstract: A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.

Abstract: A stack of the embodiment includes: a first magnetic substance; a second magnetic substance; and a first nonmagnetic substance which is disposed between the first magnetic substance and the second magnetic substance and contains at least one first metal element (M1) selected from the group consisting of ruthenium (Ru) and osmium (Os) and at least one second metal element (M2) selected from the group consisting of rhodium (Rh) and iridium (Ir). A magnetic device of the embodiment includes: a third magnetic substance; the stack; and a second nonmagnetic substance which is disposed between the third magnetic substance and the stack.