Patents by Inventor Rintaro Asai
Rintaro Asai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11043474Abstract: A semiconductor device may include a first insulated substrate, a first semiconductor chip and a second semiconductor chip disposed on the first insulated substrate, a second insulated substrate opposed to the first insulated substrate with the first semiconductor chip interposed therebetween, and a third insulated substrate opposed to the first insulated substrate with the second semiconductor chip interposed therebetween and located side by side with the second insulated substrate.Type: GrantFiled: April 29, 2019Date of Patent: June 22, 2021Assignee: DENSO CORPORATIONInventors: Shingo Tsuchimochi, Rintaro Asai, Akinori Sakakibara, Masao Noguchi
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Patent number: 10658273Abstract: A semiconductor device may include: a first and a second semiconductor elements; and a first and a second insulated substrates each including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layers respectively on one face of the first and the second insulated substrate being connected to the first and the second semiconductor element, wherein the metal layers respectively on the one face of the first and the second insulated substrate are electrically connected via a joint each other; the joint is constituted of a separate member from the insulated substrates; and one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.Type: GrantFiled: October 29, 2018Date of Patent: May 19, 2020Assignee: Denso CorporationInventor: Rintaro Asai
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Publication number: 20190385985Abstract: A semiconductor device may include a first insulated substrate, a first semiconductor chip and a second semiconductor chip disposed on the first insulated substrate, a second insulated substrate opposed to the first insulated substrate with the first semiconductor chip interposed therebetween, and a third insulated substrate opposed to the first insulated substrate with the second semiconductor chip interposed therebetween and located side by side with the second insulated substrate.Type: ApplicationFiled: April 29, 2019Publication date: December 19, 2019Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Shingo TSUCHIMOCHI, Rintaro ASAI, Akinori SAKAKIBARA, Masao NOGUCHI
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Publication number: 20190131217Abstract: A semiconductor device may include: a first and a second semiconductor elements; and a first and a second insulated substrates each including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, the metal layers respectively on one face of the first and the second insulated substrate being connected to the first and the second semiconductor element, wherein the metal layers respectively on the one face of the first and the second insulated substrate are electrically connected via a joint each other; the joint is constituted of a separate member from the insulated substrates; and one end of the joint is connected to the metal layer on the one face of the first insulated substrate, and another end of the joint is connected to the metal layer on the one face of the second insulated substrate.Type: ApplicationFiled: October 29, 2018Publication date: May 2, 2019Inventor: Rintaro Asai
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Patent number: 9553037Abstract: A semiconductor device includes a semiconductor element having a front surface and a rear surface, a pair of heat sinks disposed facing each other so as to sandwich the semiconductor element, and attached respectively to the front surface and the rear surface, and a fastening screw fastening the pair of the heat sinks in the facing direction, the fastening screw having insulation property. Threads are arranged on at least a part of the fastening screw in an axis direction of the fastening screw between the pair of the heat sinks.Type: GrantFiled: August 21, 2014Date of Patent: January 24, 2017Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Rintaro Asai
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Publication number: 20160190036Abstract: A semiconductor device includes a semiconductor element having a front surface and a rear surface, a pair of heat sinks disposed facing each other so as to sandwich the semiconductor element, and attached respectively to the front surface and the rear surface, and a fastening screw fastening the pair of the heat sinks in the facing direction, the fastening screw having insulation property. Threads are arranged on at least a part of the fastening screw in an axis direction of the fastening screw between the pair of the heat sinks.Type: ApplicationFiled: August 21, 2014Publication date: June 30, 2016Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Rintaro ASAI
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Patent number: 9337113Abstract: A semiconductor device includes a transistor, lead frames, a metal spacer, one surface of which is bonded to the transistor by a first bonding material and the other surface of which is bonded to the lead frame by a second bonding material, and a plastic mold. The plastic mold packages the transistor and the metal spacer. One surface of each of the lead frames is attached to the plastic mold. Strength of the second bonding material is lower than strength of the first bonding material. According to the above configuration, when stress is repeatedly applied to the semiconductor device, a crack occurs earlier in the second bonding material than in the first bonding material. The stress is buffered at the first bonding material.Type: GrantFiled: November 20, 2012Date of Patent: May 10, 2016Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Rintaro Asai, Atsushi Tanida
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Publication number: 20150294920Abstract: A semiconductor device includes a transistor, lead frames, a metal spacer, one surface of which is bonded to the transistor by a first bonding material and the other surface of which is bonded to the lead frame by a second bonding material, and a plastic mold. The plastic mold packages the transistor and the metal spacer. One surface of each of the lead frames is attached to the plastic mold. Strength of the second bonding material is lower than strength of the first bonding material. According to the above configuration, when stress is repeatedly applied to the semiconductor device, a crack occurs earlier in the second bonding material than in the first bonding material. The stress is buffered at the first bonding material.Type: ApplicationFiled: November 20, 2012Publication date: October 15, 2015Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Rintaro Asai, Atsushi Tanida