Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Abstract: A substrate processing apparatus includes a substrate rotator, a processing liquid supply, an anode and a cathode, and a controller. The substrate rotator is configured to hold and rotate a substrate. The processing liquid supply is configured to supply a processing liquid to the substrate held by the substrate rotator. The anode and the cathode are configured to apply a voltage to the processing liquid supplied from the processing liquid supply. The controller is configured to control the substrate rotator, the processing liquid supply, and the anode and the cathode. The controller allows, by contacting the anode and the cathode with the processing liquid independently, the processing liquid in contact with the anode and the processing liquid in contact with the cathode to be supplied to the substrate while being spaced apart from each other when the substrate is rotated.

Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Abstract: A substrate processing apparatus includes a substrate rotator, a processing liquid supply, an anode and a cathode, and a controller. The substrate rotator is configured to hold and rotate a substrate. The processing liquid supply is configured to supply a processing liquid to the substrate held by the substrate rotator. The anode and the cathode are configured to apply a voltage to the processing liquid supplied from the processing liquid supply. The controller is configured to control the substrate rotator, the processing liquid supply, and the anode and the cathode. The controller allows, by contacting the anode and the cathode with the processing liquid independently, the processing liquid in contact with the anode and the processing liquid in contact with the cathode to be supplied to the substrate while being spaced apart from each other when the substrate is rotated.

Abstract: A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

Abstract: A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.