Abstract: The present invention provides a method of manufacturing a semiconductor device to prevent the generation of crystalline defects due to shorting between interconnects resulting from etch residue as a result of the generation of vertical bird's beaks on top of the trench during field oxidation layer formation. The method includes forming an epitaxial layer over a semiconductor substrate, depositing a first SiO.sub.2 layer, an SiN layer and a second SiO.sub.2 layer in that order upon said epitaxial layer and forming a trench from the second SiO.sub.2 layer extending into the semiconductor substrate. A third SiO.sub.2 layer is formed coating said trench with a region of said third Si0.sub.2 layer removed adjacent to said first SiO.sub.2 layer to expose a portion of said epitaxial layer within said trench. The trench is then filled with a first polysilicon layer to coat the third SiO.sub.2 layer and the first SiO.sub.2 layer followed by removal of the second SiO.sub.

Abstract: In a semiconductor device manufacturing apparatus having a holder for holding a semiconductor wafer to be processed within a reaction vessel, the holder is provided with a separator for preventing ends of the semiconductor wafer from being brought into contact with the holder.