Abstract: Consistent with an example embodiment, there is a method for preparing an integrated circuit (IC) device having enhanced heat dissipation. The method comprises providing a lead frame array, of a first thickness, with a plurality of die placement areas each die placement area with bond pad landings, the bond bad landings situated about a die placement area on one or multiple sides, the bond pad landings having upper surfaces and opposite lower surfaces, placing a heat sink assembly of a second thickness, having at least two mounting tabs of the first thickness, in each die placement area and attaching the at least two mounting tabs onto corresponding bond pad landings serving as anchor pads, die bonding a device die on the heat sink device assembly, conductively bonding device die bond pads to corresponding bond pad landings, and encapsulating the wire bonded device die, heat sink assembly and lead frame array in a molding compound.

Abstract: Consistent with an example embodiment, there is a method for preparing an integrated circuit (IC) device having enhanced heat dissipation. The method comprises providing a lead frame array, of a first thickness, with a plurality of die placement areas each die placement area with bond pad landings, the bond bad landings situated about a die placement area on one or multiple sides, the bond pad landings having upper surfaces and opposite lower surfaces, placing a heat sink assembly of a second thickness, having at least two mounting tabs of the first thickness, in each die placement area and attaching the at least two mounting tabs onto corresponding bond pad landings serving as anchor pads, die bonding a device die on the heat sink device assembly, conductively bonding device die bond pads to corresponding bond pad landings, and encapsulating the wire bonded device die, heat sink assembly and lead frame array in a molding compound.

Abstract: The electronic device (100) is a chip-on-chip construction on a lead frame (10) comprising a heat sink (13) in an encapsulation (80). The first chip (20) and the second chip (30) are mutually connected by first conductive interconnections (24) and the first chip (20) is connected to the lead frame (10) by second conductive interconnections (27) which preferably have a lower reflow temperature than the first conductive interconnections (24). By heating the device (100) the adhesive layer (25) will first shrink, causing a stress, which will be relaxated by reflowing the second conductive interconnections (27).

Abstract: The electronic device (100) is a chip-on-chip construction on a lead frame (10) comprising a heat sink (13) in an encapsulation (80). The first chip (20) and the second chip (30) are mutually connected by first conductive interconnections (24) and the first chip (20) is connected to the lead frame (10) by second conductive interconnections (27) which preferably have a lower reflow temperature than the first conductive interconnections (24). By heating the device (100) the adhesive layer (25) will first shrink, causing a stress, which will be relaxated by reflowing the second conductive interconnections (27).