Abstract: Structures for a single diffusion break and methods of forming a structure for a single diffusion break. A cut is formed in a semiconductor fin. A single diffusion break includes a first dielectric layer in the cut and a second dielectric layer over the first dielectric layer. The first dielectric layer is comprised of a first material, and the second dielectric layer is comprised of a second material having a different composition than the first material. The second dielectric layer includes a first portion over the first dielectric layer and a second portion over the first portion. The first portion of the second dielectric layer has a first horizontal dimension, and the second portion of the second dielectric layer has a second horizontal dimension that is greater than the first horizontal dimension.

Abstract: Structures for a single diffusion break and methods of forming a structure for a single diffusion break. A cut is formed in a semiconductor fin. A single diffusion break includes a first dielectric layer in the cut and a second dielectric layer over the first dielectric layer. The first dielectric layer is comprised of a first material, and the second dielectric layer is comprised of a second material having a different composition than the first material. The second dielectric layer includes a first portion over the first dielectric layer and a second portion over the first portion. The first portion of the second dielectric layer has a first horizontal dimension, and the second portion of the second dielectric layer has a second horizontal dimension that is greater than the first horizontal dimension.

Abstract: Provided are methods of fabricating a semiconductor structure. The methods include providing a III-V semiconductor substrate selected from InGaAs and InAs, introducing an n-type dopant selected from S, Se, and Te directly onto a surface of the III-V semiconductor substrate, introducing a co-dopant selected from N and P directly onto a surface of the III-V semiconductor substrate, and diffusing the n-type and co-dopant into the III-V semiconductor substrate, thereby forming an n-doped III-V semiconductor substrate containing the n-type dopant and the co-dopant. The methods produce inventive semiconductor structures, and devices that include the semiconductor structure.