Abstract: A porous member includes a base member and carbon nanostructures. The base member includes a porous body having a porosity of more than or equal to 80%. The carbon nanostructures are formed on a surface of the base member, and have a width of less than or equal to 100 nm. A catalyst member includes a catalyst arranged on surfaces of the carbon nano structures.

Abstract: A method for manufacturing a carbon nanostructure according to the present invention includes a preparation step of preparing a base body, an oxidization step and a step of growing a carbon nanostructure. In the step of preparing a base body, a base body with at least a part of a contact portion or an integral portion of a catalyst member and a separation member having been oxidized is prepared. In the step of growing a carbon nanostructure, a carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member. The step of growing a carbon nanostructure includes at least one of a step of locally supplying a source gas to a portion of the catalyst member facing the separation interface region where the carbon nanostructure is being grown, and a step of locally heating the separation interface region.

Abstract: A carbon nanostructure's geometry and electrical characteristics can be controlled. A method for processing a carbon nanostructure according to the present invention includes the steps of: preparing a carbon nanostructure (e.g., a carbon nanotube) (a CNT preparation step); and exposing the carbon nanotube to an energy beam (e.g., an electron beam) while vibrating the carbon nanotube (an exposure step). This facilitates modifying the carbon nanotube in length and electrical characteristics.

Abstract: A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

Abstract: A method for manufacturing a carbon nanostructure according to the present invention includes a preparation step of preparing a base body, an oxidization step and a step of growing a carbon nanostructure. In the step of preparing a base body, a base body with at least a part of a contact portion or an integral portion of a catalyst member and a separation member having been oxidized is prepared. In the step of growing a carbon nanostructure, a carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member. The step of growing a carbon nanostructure includes at least one of a step of locally supplying a source gas to a portion of the catalyst member facing the separation interface region where the carbon nanostructure is being grown, and a step of locally heating the separation interface region.

Abstract: A porous member includes a base member and carbon nanostructures. The base member includes a porous body having a porosity of more than or equal to 80%. The carbon nanostructures are formed on a surface of the base member, and have a width of less than or equal to 100 nm. A catalyst member includes a catalyst arranged on surfaces of the carbon nano structures.

Abstract: A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

Abstract: There is provided a method for manufacturing a carbon nanostructure with reduced occurrence of a bend and the like. The method for manufacturing a carbon nanostructure according to the present invention includes the steps of: preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other (preparation step); oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member (oxidation step); bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member (CNT growth step); and growing a carbon nanostructure (CNT growth step). In the CNT growth step, the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member.

Abstract: A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5 ?m in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5 ?m in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6 ?m. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).

Abstract: A carbon nanostructure's geometry and electrical characteristics can be controlled. A method for processing a carbon nanostructure according to the present invention includes the steps of: preparing a carbon nanostructure (e.g., a carbon nanotube) (a CNT preparation step); and exposing the carbon nanotube to an energy beam (e.g., an electron beam) while vibrating the carbon nanotube (an exposure step). This facilitates modifying the carbon nanotube in length and electrical characteristics.

Abstract: There is provided a method for manufacturing a carbon nanostructure with reduced occurrence of a bend and the like. The method for manufacturing a carbon nanostructure according to the present invention includes the steps of: preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other (preparation step); oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member (oxidation step); bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member (CNT growth step); and growing a carbon nanostructure (CNT growth step). In the CNT growth step, the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member.