Abstract: A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled.

Abstract: A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled.

Abstract: The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. Through the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.

Abstract: The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. By means of the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched openings at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

Abstract: This publication discloses a method for creating a sensor construction. According to the method, on top of a conducting substrate (2), an insulating layer (5) is formed and connected to the micromechanical construction. According to the invention, the insulating layer (5) is formed to be thicker (14) in the support area (16) than in the other areas, or thinner (13) in the area of the electrode (8) than in the support area (16) of the sensor.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.