Patents by Inventor Rithu Bhonsle

Rithu Bhonsle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flash memory cells
    Patent number: 10586801
    Abstract: 3D NAND memory cells can include a source layer, a dielectric layer disposed on the source layer, and a select gate source (SGS) layer disposed on the dielectric layer. A plurality of alternating layers of conducting material and insulating material can be disposed on the SGS layer. A conductive channel can be formed within a cell pillar trench. The conductive channel can be in contact with the source layer and the plurality of alternating layers. The cell pillar trench can be positioned in a substantially perpendicular orientation with respect to the plurality of alternating layers.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: March 10, 2020
    Assignee: Intel Corporation
    Inventors: Prakash Rau Mokhna Rau, Wesly McKinsey, Rithu Bhonsle
  • FLASH MEMORY CELLS
    Publication number: 20190043871
    Abstract: 3D NAND memory cells can include a source layer, a dielectric layer disposed on the source layer, and a select gate source (SGS) layer disposed on the dielectric layer. A plurality of alternating layers of conducting material and insulating material can be disposed on the SGS layer. A conductive channel can be formed within a cell pillar trench. The conductive channel can be in contact with the source layer and the plurality of alternating layers. The cell pillar trench can be positioned in a substantially perpendicular orientation with respect to the plurality of alternating layers.
    Type: Application
    Filed: January 12, 2018
    Publication date: February 7, 2019
    Applicant: Intel Corporation
    Inventors: Prakash Rau Mokhna Rau, Wesly McKinsey, Rithu Bhonsle