Patents by Inventor Ritsuo Fukaya
Ritsuo Fukaya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230296644Abstract: The present invention pertains to a surface analysis device (1) and provides a technology that can increase accuracy and quality of measurement and analysis even when a local deviation is generated in height information of a measurement result of a scanning probe microscope (SPM) (2), due to an atmospheric pressure change with respect to an airtight tank (10). The surface analysis device (1) is provided with: an airtight tank (10); a stage (6) that holds a sample (5) in the airtight tank (10); the SPM (2) that is fixed to a structure configuring the airtight tank (1) and that measures the surface of the sample (5); a sensor (4) that is disposed outside of the airtight tank (10) and that measures atmospheric pressure; and a computer system that analyzes the surface of the sample by using a first signal obtained through measurement by the SPM (2) and a second signal obtained through measurement by the sensor (4).Type: ApplicationFiled: August 12, 2020Publication date: September 21, 2023Inventors: Ritsuo FUKAYA, Yasuhiro ANDO, Yoshihiro ISOZAKI
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Patent number: 8969801Abstract: To provide a scanning electron microscope that can detect reflected electrons of any emission angle, the scanning electron microscope, which obtains an image by detecting electrons from a sample (19) has: a control electrode (18) that discriminates between secondary electrons from the sample (19) and reflected electrons; a secondary electron conversion electrode (13) that generates secondary electrons by the impact of reflected electrons; a withdrawing electrode (12) that withdraws those secondary electrons; an energy filter (11) that discriminates between the secondary electrons withdrawn and electrons reflected from the sample (19); and a control calculation means (36) that selects a combination of voltages applied to the secondary electron conversion electrode (13), the withdrawing electrode (12), and energy filter (11).Type: GrantFiled: September 27, 2012Date of Patent: March 3, 2015Assignee: Hitachi High-Technologies CorporationInventors: Nobuhiro Okai, Yasunari Sohda, Ritsuo Fukaya, Zhigang Wang
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Patent number: 8907267Abstract: This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle (112) signal; and a second detection condition for detecting a reflected charged particle (111) signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation.Type: GrantFiled: August 16, 2012Date of Patent: December 9, 2014Assignee: Hitachi High-Technologies CorporationInventors: Zhigang Wang, Nobuhiro Okai, Hidetoshi Sato, Ritsuo Fukaya
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Publication number: 20140299769Abstract: To provide a scanning electron microscope that can detect reflected electrons of any emission angle, the scanning electron microscope, which obtains an image by detecting electrons from a sample (19) has: a control electrode (18) that discriminates between secondary electrons from the sample (19) and reflected electrons; a secondary electron conversion electrode (13) that generates secondary electrons by the impact of reflected electrons; a withdrawing electrode (12) that withdraws those secondary electrons; an energy filter (11) that discriminates between the secondary electrons withdrawn and electrons reflected from the sample (19); and a control calculation means (36) that selects a combination of voltages applied to the secondary electron conversion electrode (13), the withdrawing electrode (12), and energy filter (11).Type: ApplicationFiled: September 27, 2012Publication date: October 9, 2014Inventors: Nobuhiro Okai, Yasunari Sohda, Ritsuo Fukaya, Zhigang Wang
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Patent number: 8835844Abstract: The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges.Type: GrantFiled: February 23, 2010Date of Patent: September 16, 2014Assignee: Hitachi, Ltd.Inventors: Makoto Ezumi, Yoichi Ose, Akira Ikegami, Hideo Todokoro, Tatsuaki Ishijima, Takahiro Sato, Ritsuo Fukaya, Kazunari Asao
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Publication number: 20140217274Abstract: This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle (112) signal; and a second detection condition for detecting a reflected charged particle (111) signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation.Type: ApplicationFiled: August 16, 2012Publication date: August 7, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Zhigang Wang, Nobuhiro Okai, Hidetoshi Sato, Ritsuo Fukaya
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Patent number: 8692197Abstract: A scanning electron microscope and an optical-condition setting method are provided. The optical condition allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there are a large number of measurement and inspection points. A pattern on a sample is measured based on the detection of electrons by scanning the sample surface with an electron beam. A change in measurement values relative to the number of measurements is determined from the measurement values at a plurality of measurement points on the sample, and the sample-surface electric field is controlled so that the inclination of the change becomes equal to zero, or becomes close to zero.Type: GrantFiled: February 9, 2011Date of Patent: April 8, 2014Assignee: Hitachi High-Technologies CorporationInventors: Zhigang Wang, Nobuhiro Okai, Ritsuo Fukaya
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Patent number: 8487251Abstract: An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.Type: GrantFiled: August 8, 2009Date of Patent: July 16, 2013Assignee: Hitachi High-Technologies CorporationInventors: Ritsuo Fukaya, Nobuhiro Okai, Koki Miyahara, Zhigang Wang
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Publication number: 20120318977Abstract: It is an object of the present invention to provide an optical-condition setting method for a charged-particle beam device, and the charged-particle beam device which make it possible to set the following optical condition: Namely, an optical condition which allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there exist a large number of measurement and inspection points.Type: ApplicationFiled: February 9, 2011Publication date: December 20, 2012Applicant: Hitachi High-Technologies CorporationInventors: Zhigang Wang, Nobuhiro Okai, Ritsuo Fukaya
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Publication number: 20120126119Abstract: To automatically measure patterns arranged symmetrically with respect to the axis of rotation on a sample by following predetermined procedures, a charged-particle-beam device of the present invention automatically rotates a template image to be used for template matching by an angle (?1) calculated from the coordinates on the sample. Accordingly, when patterns arranged regularly and symmetrically with respect to the axis of rotation are automatically measured, the same template can be repeatedly used as in a case where devices arranged iteratively in a lattice-like fashion are observed or measured. Thus, the workload required to create a recipe can be reduced.Type: ApplicationFiled: July 27, 2010Publication date: May 24, 2012Applicant: Hitachi High-Technologies CorporationInventors: Ritsuo Fukaya, Kazuhiro Ueda
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Patent number: 8178836Abstract: A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.Type: GrantFiled: June 3, 2010Date of Patent: May 15, 2012Assignee: Hitachi High-Technologies CorporationInventors: Tatsuaki Ishijima, Katsuhiro Sasada, Ritsuo Fukaya
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Patent number: 8080789Abstract: The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.Type: GrantFiled: September 15, 2009Date of Patent: December 20, 2011Assignee: Hitachi, Ltd.Inventors: Osamu Nasu, Tadashi Otaka, Hiroki Kawada, Ritsuo Fukaya, Makoto Ezumi
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Publication number: 20110139981Abstract: An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.Type: ApplicationFiled: August 8, 2009Publication date: June 16, 2011Inventors: Ritsuo Fukaya, Nobuhiro Okai, Koki Miyahara, Zhigang Wang
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Publication number: 20110073760Abstract: It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material. A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.Type: ApplicationFiled: December 7, 2010Publication date: March 31, 2011Applicant: Hitachi High-Technologies CorporationInventors: Ritsuo FUKAYA, Zhigang WANG
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Patent number: 7851756Abstract: It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material. A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.Type: GrantFiled: July 30, 2008Date of Patent: December 14, 2010Assignee: Hitachi High-Technologies CorporationInventors: Ritsuo Fukaya, Zhigang Wang
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Publication number: 20100294929Abstract: The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges.Type: ApplicationFiled: February 23, 2010Publication date: November 25, 2010Inventors: Makoto Ezumi, Yoichi Ose, Akira Ikegami, Hideo Todokoro, Tatsuaki Ishijima, Takahiro Sato, Ritsuo Fukaya, Kazunari Asao
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Publication number: 20100237241Abstract: A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.Type: ApplicationFiled: June 3, 2010Publication date: September 23, 2010Applicant: Hitachi High-Technologies CorporationInventors: Tatsuaki ISHIJIMA, Katsuhiro Sasada, Ritsuo Fukaya
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Patent number: 7745782Abstract: A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.Type: GrantFiled: February 27, 2008Date of Patent: June 29, 2010Assignee: Hitachi High-Technologies CorporationInventors: Tatsuaki Ishijima, Katsuhiro Sasada, Ritsuo Fukaya
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Patent number: 7700918Abstract: The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges.Type: GrantFiled: March 17, 2008Date of Patent: April 20, 2010Assignee: Hitachi, Ltd.Inventors: Makoto Ezumi, Yoichi Ose, Akira Ikegami, Hideo Todokoro, Tatsuaki Ishijima, Takahiro Sato, Ritsuo Fukaya, Kazunari Asao
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Publication number: 20100038535Abstract: The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.Type: ApplicationFiled: September 15, 2009Publication date: February 18, 2010Inventors: Osamu Nasu, Tadashi Otaka, Hiroki Kawada, Ritsuo Fukaya, Makoto Ezumi