Patents by Inventor Ritsuya Matsuzaka

Ritsuya Matsuzaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtering target material
    Patent number: 6875324
    Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.
    Type: Grant
    Filed: March 8, 2002
    Date of Patent: April 5, 2005
    Assignee: Tanaka Kikinzoku Kogyo K.K.
    Inventors: Noriaki Hara, Somei Yarita, Ken Hagiwara, Ritsuya Matsuzaka
  • SPUTTERING TARGET MATERIAL
    Publication number: 20040079635
    Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.
    Type: Application
    Filed: March 8, 2002
    Publication date: April 29, 2004
    Inventors: Noriaki Hara, Somei Yarita, Ken Hagiwara, Ritsuya Matsuzaka
  • Sputtering target material
    Publication number: 20020185373
    Abstract: The present invention is directed to a precious metal sputtering target having a columnar crystallographic microstructure such that crystals are grown in a direction normal to the sputtering surface in order to solve conventional problems. The high-purity sputtering target of the present invention prevents chipping of a minute cluster mass that occurs in a sputtering target produced through casting or powder metallurgy; produces thin film of excellent quality; and has considerably reduced internal defects.
    Type: Application
    Filed: June 28, 2002
    Publication date: December 12, 2002
    Inventors: Noriaki Hara, Somei Yarita, Ken Hagiwara, Ritsuya Matsuzaka
  • Method for producing sputtering target material
    Patent number: 6309529
    Abstract: The invention provides a method for producing a sputtering target material including electrolyzing a molten salt mixture containing a precious metal salt and a solvent salt, to thereby deposit a precious metal or a precious metal alloy. The method enables simplification of production steps and produces high-purity target materials. In addition, the electrodeposited precious metal or precious metal alloy is heat-treated at a temperature of at least 800° C. but lower than the melting point of the precious metal, to thereby produce a target material of higher purity.
    Type: Grant
    Filed: February 15, 2000
    Date of Patent: October 30, 2001
    Assignee: Tanaka Kikinozoku Kogyo K.K.
    Inventors: Noriaki Hara, Somei Yarita, Ken Hagiwara, Ritsuya Matsuzaka