Abstract: A process is provided for the formation of a conductive circuit pattern on a base metal formed on a substrate. On the base metal, a plating resist is first provided in a pattern corresponding to the circuit to be formed and a circuit pattern is then formed by plating. The plating resist is treated with a stripper and then with a stripping residue remover to cut off chemical bonds in the resist by a dehydrating decomposition reaction. The base metal is treated with an etchant for the base metal, whereby any resist residue still remaining after the treatment with the stripping residue remover is removed and the base metal are etched at areas which were covered by the plating resist.

Abstract: In a process for electroless copper plating in an electroless copper plating solution containing a copper salt, a complexing agent for the copper salt, a reducing agent for the copper salt, and a pH-adjusting agent, a plating film having distinguished mechanical properties can be obtained by adding at least one of soluble inorganic silicon compounds and soluble inorganic germanium compounds and conducting the electroless copper plating by injecting an oxygen-containing gas into the plating solution or by adding an oxidizing agent to the plating solution or by both injection or the oxygen-containing gas and addition of the oxidizing agent thereto. The stability of the electroless copper plating solution can be maintained better thereby and substantially thick plating is possible.