Patents by Inventor Rob Kraft

Rob Kraft has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming single damascene via or trench cavities and for forming dual damascene via cavities
    Patent number: 7214609
    Abstract: Methods are disclosed for forming trench or via cavities in a single damascene interconnect structure, comprising etching a dielectric layer to form a cavity there and to expose an underlying etch-stop layer, and etching the exposed etch-stop layer to extend the cavity and to expose a conductive feature in an existing interconnect structure, wherein etching the portion of the dielectric layer and etching the exposed portion of the etch-stop layer are performed concurrently with substantially no intervening processing steps therebetween.
    Type: Grant
    Filed: December 5, 2002
    Date of Patent: May 8, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Ping Jiang, Rob Kraft, Guoqiang Xing, Karen H. R. Kirmse, Eden Zielinski
  • Methods for forming single damascene via or trench cavities and for forming dual damascene via cavities
    Publication number: 20040110369
    Abstract: Methods are disclosed for forming trench or via cavities in a single damascene interconnect structure, comprising etching a dielectric layer to form a cavity there and to expose an underlying etch-stop layer, and etching the exposed etch-stop layer to extend the cavity and to expose a conductive feature in an existing interconnect structure, wherein etching the portion of the dielectric layer and etching the exposed portion of the etch-stop layer are performed concurrently with substantially no intervening processing steps therebetween.
    Type: Application
    Filed: December 5, 2002
    Publication date: June 10, 2004
    Inventors: Ping Jiang, Rob Kraft, Guoqiang Xing, Karen H. R. Kirmse, Eden Zielinski
  • Methods for forming vias and trenches with controlled SiC etch rate and selectivity
    Publication number: 20030181034
    Abstract: Methods are disclosed for forming vias and trenches through silicon carbide and dielectric materials for interconnection of electrical devices in a semiconductor product, wherein etch chemistry hydrogen content is controlled so as to achieve desired SiC etch rate and selectivity during trench or via etch, as well as during hard mask or etch-stop layer etch.
    Type: Application
    Filed: March 19, 2002
    Publication date: September 25, 2003
    Inventors: Ping Jiang, Rob Kraft, Kenneth Joseph Newton