Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: Photovoltaic devices are formed with electroplated metal grids that are effectively adhered to the devices. Metal-rich silicides, such as nickel silicides, are formed on the devices by annealing. The metal used in the anneal exhibits low stress. Annealing may be conducted in ambient air followed by removal of oxide and excess metal from the metal-rich silicide. Laser patterning of the antireflective coating of the devices can be used to expose the emitter to form front grid contacts. Doping of the emitter in the patterned region can be increased during laser patterning. The ratio of the centerline to centerline pitch per laser width is controlled to ensure sufficient adhesion of subsequently plated busbars.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: A method for producing a solar cell with a selective emitter is disclosed. A semiconductor substrate (1) is provided. A layer (3) of dopant source material with a dopant type opposite to the dopant type of the substrate (1) is formed at a surface of the substrate (1). By applying heat to the layer (3), a homogeneous lightly doped emitter region (5) is formed. In a first lasering step, selective heavily doped emitter regions (11) are formed by applying laser light (7) to contact surface areas (9). Optionally, the layer (3) is subsequently removed and an additional dielectric layer (15) is applied to the front side of the substrate (1). In a second lasering step, the layer (3) or the layer (15) are locally removed by applying laser light (21) to the contact surface areas (9), thereby locally exposing the surface of the substrate (1). In the locally exposed contact surface areas (9), metal contacts (23) are finally formed, using for example metal-plating techniques.