Abstract: A thyristor is disclosed comprising: a first region of a first conductivity type; a second region of a second conductivity type and adjoining the first region; a third region of the first conductivity type and adjoining the second region; a fourth region of the second conductivity type and comprising a first segment and a second segment separate from the first segment, the first segment and second segment each adjoining the third region; a first contact adjoining the first region; a second contact adjoining the first segment; and a trigger contact adjoining the second segment and separate from the second contact.

Abstract: A semiconductor die is disclosed comprising a lateral semiconductor device on an upper major surface of a substrate, the integrated circuit comprising a silicon layer over the substrate, a recess in the silicon layer, a layer of LOCOS silicon oxide within the recess and having a grown upper surface which is coplanar with the surface of an un-recessed portion of the silicon layer, wherein the silicon layer beneath the recess has a non-uniform lateral doping profile, and is comprised in a drift region of the lateral semiconductor device. A method of making such a die is also disclosed, as is an integrated circuit and a driver circuit.

Abstract: A semiconductor die is disclosed comprising a lateral semiconductor device on an upper major surface of a substrate, the integrated circuit comprising a silicon layer over the substrate, a recess in the silicon layer, a layer of LOCOS silicon oxide within the recess and having a grown upper surface which is coplanar with the surface of an un-recessed portion of the silicon layer, wherein the silicon layer beneath the recess has a non-uniform lateral doping profile, and is comprised in a drift region of the lateral semiconductor device. A method of making such a die is also disclosed, as is an integrated circuit and a driver circuit.

Abstract: Ambient light is sensed for use in determining luminous flux. According to an example embodiment, ambient light is sensed using two light sensor arrangements that respectively respond differently to light of different relative wavelengths. The output of the sensors is nonlinearly combined to generate data indicative of the luminous flux. This luminous flux data is used to generate a control output for controlling an electronic display.

Abstract: A thyristor is disclosed comprising: a first region of a first conductivity type; a second region of a second conductivity type and adjoining the first region; a third region of the first conductivity type and adjoining the second region; a fourth region of the second conductivity type and comprising a first segment and a second segment separate from the first segment, the first segment and second segment each adjoining the third region; a first contact adjoining the first region; a second contact adjoining the first segment; and a trigger contact adjoining the second segment and separate from the second contact. Methods of triggering such a thyristor are also disclosed, as are circuits utilising one or more such thyristors.

Abstract: There is disclosed a semiconductor device. The device comprises: a silicon layer; a tapered insulating layer formed on the silicon layer; and a plurality of Bipolar CMOS DMOS device layers formed above the tapered insulating layer. The taper of the tapered insulating layer is in the lower surface of the tapered insulating layer. The tapered insulating layer has a substantially planar upper surface and is at least partially recessed in the silicon layer.

Abstract: A light sensor is used to detect ambient light conditions. According to an example embodiment, a light sensor (112) detects color temperature and, in some instances, intensity characteristics of ambient light (120, 130, 140) in an environment and uses these detected characteristics (116) to determine the location of the sensor relative to natural and artificial light sources. This location determination is used to selectively operate circuits in a device such as a hand-held telephone, computer device or personal data assistant (PDA).

Abstract: A light sensor arrangement is used to detect ambient light conditions. According to an example embodiment, a light detector arrangement (e.g., 110) generates an output in response to light incident thereupon. An averaging-type circuit (e.g., 160) samples the generated output for overlapping time intervals, and combines the sampled output to form a new output that characterizes the incident light. The overlapping time intervals 5 (e.g., 221-261) are chosen such that the new output is generally flicker-free for incident light generated using one of at least two different power supply frequencies.

Abstract: Disclosed is a photosensitive system including a gated photodiode having at least one field plate and a cathode and an output buffer having an input coupled to the gated photodiode for reducing the impedance of the photodiode signal and having an output for providing the reduced impedance signal. The output is electrically connected to the at least one field plate. A device including such a photosensitive system is also disclosed.

Abstract: A circuit having a field plate is provided. In accordance with one or more embodiments, an electronic device includes a substrate having an active region, and a contiguous field plate separated from the active region by a dielectric material on the substrate. The field plate has first and second end regions (e.g., opposing one another along a length of the field plate), with the second end region being patterned. The patterned end region has at least one opening therein as defined by edges of the field plate (e.g., along an outer perimeter and/or as an internal opening), and couples a field to the active region in response to a voltage applied to the field plate. This field is greater in strength near the first end region, relative to the patterned end region.

Abstract: A light sensor and light sensing system to detect an intensity of incident light and an angle of incidence of the incident light. The light sensor includes a dielectric layer, a plurality of photo detectors coupled relative to the dielectric layer, and a plurality of stacks of opaque slats embedded within the dielectric layer. The dielectric layer is substantially transparent to the incident light. The photo detectors detect the incident light through the dielectric layer. The stacks of opaque slats are approximately parallel to an interface between the dielectric layer and the photo detectors. The stacks of opaque slats define light apertures between adjacent stacks of opaque slats. At least some of the stacks of opaque slats are arranged at a non-zero angle relative to other stacks of the opaque slats.

Abstract: An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

Abstract: An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

Abstract: Disclosed is a photosensitive system including a gated photodiode having at least one field plate and a cathode and an output buffer having an input coupled to the gated photodiode for reducing the impedance of the photodiode signal and having an output for providing the reduced impedance signal. The output is electrically connected to the at least one field plate. A device including such a photosensitive system is also disclosed.

Abstract: The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (12) with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2) and a collector region (3), which are provided with, respectively, a first, a second and a third connection conductor (4, 5, 6), and wherein the bandgap of the base region (2) is smaller than that of the collector region (3) or of the emitter region (1), for example by the use of a silicon-germanium mixed crystal instead of pure silicon in the base region (2). Such a device is characterized by a very high speed, but its transistor shows a relatively low BVeeo. In a device (10) according to the invention the doping flux of the emitter region (1) is locally reduced by a further semiconductor region (20) of the second conductivity type which is embedded in the emitter region (1).

Abstract: A light sensor arrangement is used to detect ambient light conditions. According to an example embodiment, a light detector arrangement (e.g., 110) generates an output in response to light incident thereupon. An averaging-type circuit (e.g., 160) samples the generated output for overlapping time intervals, and combines the sampled output to form a new output that characterizes the incident light. The overlapping time intervals 5 (e.g., 221-261) are chosen such that the new output is generally flicker-free for incident light generated using one of at least two different power supply frequencies.

Abstract: A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field regions (46). Pillars (40) may be provided.

Abstract: A power semiconductor device comprises a conductive gate, provided in an upper part of a trench (11) formed in a semiconductor substrate (1), and a conductive field plate, extending in the trench, parallel to the conductive gate, to a depth greater that the conductive gate. The field plate is insulated from the walls and bottom of the trench by a field plate insulating layer that is thicker than the gate insulating layer. In one embodiment, the field plate is insulated within the trench from the gate. Impurity doped regions of a first conductivity type are provided at the surface of the substrate adjacent the first and second sides of the trench and form source and drain regions, and a body region (7) of second conductivity type is formed under the source region on the first side of the trench (11). The conductive gate is insulated from the body region (7) by a gate insulating layer. A method of making the semiconductor device is compatible with conventional CMOS processes.

Abstract: Ambient light is sensed for use in determining luminous flux. According to an example embodiment, ambient light is sensed using two light sensor arrangements that respectively respond differently to light of different relative wavelengths. The output of the sensors is nonlinearly combined to generate data indicative of the luminous flux. This luminous flux data is used to generate a control output for controlling an electronic display.

Abstract: A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described.