Patents by Inventor Robb Allen Johnson

Robb Allen Johnson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 7713829
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: May 11, 2010
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY
    Publication number: 20080124881
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: November 22, 2006
    Publication date: May 29, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack Ooh Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 7173274
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: February 6, 2007
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 6815802
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: April 15, 2002
    Date of Patent: November 9, 2004
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglass Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Epitaxial base bipolar transistor with raised extrinsic base
    Patent number: 6812545
    Abstract: An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.
    Type: Grant
    Filed: April 29, 2003
    Date of Patent: November 2, 2004
    Assignee: International Business Machines Corporation
    Inventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St. Onge
  • Epitaxial base bipolar transistor with raised extrinsic base
    Publication number: 20030201517
    Abstract: An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to..said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.
    Type: Application
    Filed: April 29, 2003
    Publication date: October 30, 2003
    Inventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St,. Onge
  • Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base
    Patent number: 6617220
    Abstract: An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: September 9, 2003
    Assignee: International Business Machines Corporation
    Inventors: James Stuart Dunn, David L. Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St. Onge
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Publication number: 20020121676
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: April 15, 2002
    Publication date: September 5, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR SI-GE BIPOLAR TECHNOLOGY
    Publication number: 20020100917
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: January 30, 2001
    Publication date: August 1, 2002
    Applicant: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich
  • Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
    Patent number: 6426265
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: July 30, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D. Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich