Patents by Inventor Robbie J. Jorgenson

Robbie J. Jorgenson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE
    Publication number: 20110244609
    Abstract: An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure.
    Type: Application
    Filed: November 30, 2010
    Publication date: October 6, 2011
    Applicant: LIGHTWAVE PHOTONICS, INC.
    Inventors: Robbie J. Jorgenson, David J. King
  • III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
    Patent number: 7915624
    Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
    Type: Grant
    Filed: August 3, 2007
    Date of Patent: March 29, 2011
    Assignee: Lightwave Photonics, Inc.
    Inventor: Robbie J. Jorgenson
  • Current-injecting/tunneling light-emitting device and method
    Patent number: 7842939
    Abstract: An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: November 30, 2010
    Assignee: Lightwave Photonics, Inc.
    Inventors: Robbie J. Jorgenson, David J. King
  • CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD
    Publication number: 20090212278
    Abstract: An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure.
    Type: Application
    Filed: February 25, 2009
    Publication date: August 27, 2009
    Applicant: LIGHTWAVE PHOTONICS, INC.
    Inventors: Robbie J. Jorgenson, David J. King
  • III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
    Publication number: 20080029773
    Abstract: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
    Type: Application
    Filed: August 3, 2007
    Publication date: February 7, 2008
    Inventor: Robbie J. Jorgenson