Patents by Inventor Rober J. Miller

Rober J. Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline SiGe Junctions for Advanced Devices
    Publication number: 20080248635
    Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.
    Type: Application
    Filed: May 12, 2008
    Publication date: October 9, 2008
    Applicant: International Business Machines Corporation
    Inventors: Kevin Kok Chan, Rober J. Miller, Erin C. Jones, Atul Ajmera
  • Polycrystalline SiGe junctions for advanced devices
    Patent number: 7135391
    Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: November 14, 2006
    Assignee: International Business Machines Corporation
    Inventors: Kevin Kok Chan, Rober J. Miller, Erin C. Jones, Atul Ajmera