Abstract: A method and circuit for repairing a memory array having one or more memory segments each having one spare column and a predetermined number of spare rows common to all segments, the method comprises, while testing the memory array for failures, generating an equal number of unique segment repair solutions for each segment with each segment repair solution including one defective column address, if any, and a number of defective row addresses, if any, corresponding to the predetermined number of spare rows; and, after completing testing, analyzing all segment repair solution combinations consisting of one segment repair solution selected from each segment; and identifying the best segment repair solution combination of combinations having a number of different defective row addresses which is less than or equal to the predetermined number of spare rows.

Abstract: A memory test controller comprises a test instruction register array for storing a plurality of test instructions, each register having instruction fields for storing instruction data specifying operations to be performed on the memory array, a repeat module for repeating a group of one or more of the test instructions with modified data, the repeat module including storage means for storing instruction field modification data; and each register of the test instruction register array including an instruction field for enabling or disabling the repeat module.

Abstract: A static memory device is disclosed having an array of static memory cells, each memory cell having first and second cross-coupled inverters. All of the memory cells have distinct power voltage connections to the first and second inverters of each memory cell. When a reset signal occurs, the device's reset apparatus generates a voltage imbalance on the power voltage connections so that distinct voltage levels are applied to the first and second cross-coupled inverters of each memory cell. The voltage imbalance causes all of the memory cells in the array to be set into a predetermined state. In a preferred embodiment, the power voltage connections include a common high voltage power connection to all of the memory cells and distinct low voltage power connections to the first and second inverters of each memory cell.

Abstract: Apparatus for measuring a pressure differential in a fluid carrying conduit characterized by a digital representation of the rate of fluid flow and a high degree of accuracy is disclosed. The sensor portion of the apparatus includes two identical electrically driven piezoelectric crystals. One crystal provides a series of pulses at its resonant frequency for use as a reference signal. The second crystal provides a series of pulses at a frequency which is inversely related to a force applied thereto. The sensor further includes two (minimally) arcuately curved stainless steel sealing diaphragms urged in opposing directions by two pressures acting in opposing directions. The movement of the two diaphragms, which are rigidly connected to one another, and which is directly related to the difference in magnitude of the two pressures, is used to apply the force to the second crystal.