Abstract: One example embodiment includes a vertical takeoff and landing (VTOL) unmanned aerial vehicle (UAV). The VTOL UAV includes a flight control system configured to provide avionic control of the VTOL UAV in a hover mode and in a level-flight mode. The VTOL UAV also includes a body encapsulating an engine and the flight control system. The VTOL UAV further includes a rotor disk coupled to the engine and configured to provide vertical thrust and cyclic pitch control in the hover mode and to provide horizontal thrust for flight during the level-flight mode.

Abstract: One example embodiment includes a vertical takeoff and landing (VTOL) unmanned aerial vehicle (UAV). The VTOL UAV includes a flight control system configured to provide avionic control of the VTOL UAV in a hover mode and in a level-flight mode. The VTOL UAV also includes a body encapsulating an engine and the flight control system. The VTOL UAV further includes a rotor disk coupled to the engine and configured to provide vertical thrust and cyclic pitch control in the hover mode and to provide horizontal thrust for flight during the level-flight mode.

Abstract: A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.