Abstract: The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.

Abstract: A rotary transformer includes a resonant circuit and a coil drive circuit. The resonant circuit includes a resonating capacitor connected to a power MOS transistor, coupled across the primary coil of the transformer. The coil drive circuit includes a diode connected to a power MOS transistor coupled across the primary coil of the transformer. A microprocessor detects changes in the voltage across the primary coil. The resonant circuit is connected and disconnected from the transformer during a power transfer mode and a data transfer mode, respectively. During the power transfer mode, stored energy in the leakage inductance of the primary coil is used for power coupling, via the resonant circuit, instead of being dissipated as heat. The resonant circuit is disconnected from the rotary transformer during the data transfer mode to maximize bandwidth for two-way data transfer between the primary and secondary sides of the transformer.

Abstract: A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

Abstract: A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

Abstract: A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

Abstract: A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.

Abstract: A reactor 20 includes a shield 50 which prevents the deposition of materials along a line-of-sight path from a wafer 26 toward and onto an electrode 32, or a window 38 which couples an electrode 32 to a reaction chamber of the reactor 20. The shield can be comprised of a conductor and/or an insulator. The shield can affect the character of a plasma generated in the reactor.