Patents by Inventor Robert A. Friedman

Robert A. Friedman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtered pin amorphous silicon semi-conductor device and method therefor
    Patent number: 4417092
    Abstract: A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.
    Type: Grant
    Filed: March 16, 1981
    Date of Patent: November 22, 1983
    Assignee: Exxon Research and Engineering Co.
    Inventors: Theodore D. Moustakas, Robert A. Friedman
  • Gradient doping in amorphous silicon
    Patent number: 4251289
    Abstract: An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the amorphous silicon layer. Embodied in a photovoltaic device, the gradient doping profile increases the width of the depletion or barrier region and concurrently ensures an ohmic contact between amorphous silicon and current carrying electrodes.
    Type: Grant
    Filed: December 28, 1979
    Date of Patent: February 17, 1981
    Assignee: Exxon Research & Engineering Co.
    Inventors: Theodore D. Moustakas, Robert A. Friedman, Christopher R. Wronski