Abstract: An integrated circuit is provided with particular application for high frequency modulation circuits, such as a mixer circuit, with reduced noise and gain. The circuit provides a novel application of a single device comprising a 4 or 5 terminal, gate controlled lateral bipolar junction transistor device, in the form of a merged MOS and lateral bipolar transistor. In a grounded base configuration, RF and LO signals are applied to the gate and emitter terminals respectively and provide for modulated output at the collector, and provides signal modulation with reduced noise compared with multi-device implementations of known mixer circuits using a summation circuit, diodes and FETs. Advantageously, operation of the device in the grounded base or grounded emitter configuration provides for strong modulation of the DC current gain, i.e. over 4 decades, as a function of gate voltage.

Abstract: A conductor-dielectric-semiconductor device and a method of making such a device which has an insulating silicon-dioxide dielectric layer on a silicon substrate, and a conductive layer over a region of the dielectric layer. Silicon ions have been implanted into the region under the conductive layer. Depending upon the thickness of the region and the concentration of implanted silicon ions, the device can function as an IGFET memory device or a vertical resistor between the conductive layer and the substrate.