Abstract: A system is shown for connecting a plurality of intelligent terminals through a central non-blocking switch to each other, to a partitioned memory and to one or more service processors to form a local area network.

Abstract: A method of cooling induction-heated vapor deposition apparatus including an electrically grounded deposition enclosure and a RF induction heating coil having essentially electrically uninsulated turns thereof disposed about the deposition enclosure, comprises the step of spraying deionized liquid having a resistivity of at least 14 megohms-om directly onto the apparatus.

Abstract: The reactor includes an R.F. induction coil, connected to a power supply, and located in proximity to the deposition enclosure. The coil radiates energy, a portion of which is converted by a susceptor situated in the enclosure into heat which is applied to the surface of the wafer adjacent thereto. A concave metallic infrared reflector redirects some of the normally unused radiated energy, in the form of radiant heat, onto the external surface of the wafer to promote even heating and, thus, reduce temperature gradients in the wafer thereby eliminating detrimental dislocation motion or slip. Moreover, the input power requirements of the system are reduced. Preferably, the enclosure is cooled by spraying de-ionized liquid thereon to eliminate unwanted deposition of dopants on the interior surface thereof.

Abstract: Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.

Abstract: Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.

Abstract: The embodiment relates to special controls in a processor to prevent synonym entries in a translation lookaside buffer (DLAT) for a system which has DLAT entries that can concurrently translate virtual page addresses in multiple address spaces into real main storage page frame addresses. The controls use a synonym resolution register (SRR) which divides each address space in the system into common and private portions. Fields in the SRR indicate which portions are to be common to all address spaces, and which portions are private in each address space. A SRR control circuit selects a particular status field under control of a virtual address requesting main storage access. Each DLAT entry contains a common/private storage indicator which is controlled by the particular status field when the DLAT entry is loaded.