Abstract: A cathodic arc plasma source has an anode formed of a plurality of spaced baffles which extend beyond the active cathode surface of the cathode. With the open baffle structure of the anode, most macroparticles pass through the gaps between the baffles and reflect off the baffles out of the plasma stream that enters a filter. Thus the anode not only has an electrical function but serves as a prefilter. The cathode has a small diameter, e.g. a rod of about ¼ inch (6.25 mm) diameter. Thus the plasma source output is well localized, even with cathode spot movement which is limited in area, so that it effectively couples into a miniaturized filter. With a small area cathode, the material eroded from the cathode needs to be replaced to maintain plasma production. Therefore, the source includes a cathode advancement or feed mechanism coupled to cathode rod. The cathode also requires a cooling mechanism.

Abstract: Cathodic arc plasmas are contaminated with macroparticles. A variety of magnetic plasma filters has been used with various success in removing the macroparticles from the plasma. An open-architecture, bent solenoid filter, with additional field coils at the filter entrance and exit, improves macroparticle filtering. In particular, a double-bent filter that is twisted out of plane forms a very compact and efficient filter. The coil turns further have a flat cross-section to promote macroparticle reflection out of the filter volume. An output conditioning system formed of an expander coil, a straightener coil, and a homogenizer, may be used with the magnetic filter for expanding the filtered plasma beam to cover a larger area of the target. A cathodic arc plasma deposition system using this filter can be used for the deposition of ultrathin amorphous hard carbon (a-C) films for the magnetic storage industry.

Abstract: A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing.

Abstract: An apparatus and method for coating or layering a surface with a metal utilizing a metal vapor vacuum arc plasma source. The apparatus includes a trigger mechanism for actuating the metal vacuum vapor arc plasma source in a pulsed mode at a predetermined rate. The surface or substrate to be coated or layered is supported in position with the plasma source in a vacuum chamber. The surface is electrically biased for a selected period of time during the pulsed mode of operation of the plasma source. Both the pulsing of the metal vapor vacuum arc plasma source and the electrical biasing of the surface are synchronized for selected periods of time.

Abstract: An ion source utilizing a cathode and anode for producing an electric arc therebetween. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma leaves the generation region and expands through another regon. The density profile of the plasma may be flattened using a magnetic field formed within a vacuum chamber. Ions are extracted from the plasma to produce a high current broad on beam.

Abstract: A coaxial cable connector for interfacing with an edge connector for a printed circuit board whereby a coaxial cable can be interconnected with a printed circuit board through the edge connector. The coaxial connector includes a body having two leg portions extending from one side for receiving the edge connector therebetween, and a tubular portion extending from an opposing side for receiving a coaxial cable. A cavity within the body receives a lug of the edge connector and the center conductor of the coaxial cable. Adjacent lugs of the edge connector can be bend around the edge connector housing to function as spring-loaded contacts for receiving the coaxial connector. The lugs also function to facilitate shielding of the center conductor where fastened to the edge connector lug.

Abstract: An ion generating apparatus utilizing a vacuum chamber, a cathode and an anode in the chamber. A source of electrical power produces an arc or discharge between the cathode and anode. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma is directed to an extractor which separates the electrons from the plasma, and accelerates the ions to produce an ion beam. One embodiment of the appaatus utilizes a multi-cathode arrangement for interaction with the anode.

Abstract: An ion source of the Penning discharge type having a self-cleaning aperture is provided by a second dynode (24) with an exit aperture (12) in a position opposite a first dynode 10a, from which the ions are sputtered, two opposing cathodes (14, 16), each with an anode (18, 20) for accelerating electrons emitted from the cathodes into a cylindrical space defined by the first and second dynode. A support gas maintained in this space is ionized by the electrons. While the cathodes are supplied with a negative pulse to emit electrons, the first dynode is supplied with a negative pulse (e.g., -300 V) to attract atoms of the ionized gas (plasma). At the same time, the second dynode may also be supplied with a small voltage that is negative with respect to the plasma (e.g., -5 V) for tuning the position of the plasma miniscus for optimum extraction geometry. When the negative pulse to the first dynode is terminated, the second dynode is driven strongly negative (e.g.