Abstract: A current source for providing matched currents at low and variable bias voltages. The current source includes a first circuit, a second circuit, and a biasing circuit. The first circuit provides a first current. The first circuit includes a first transistor with a control terminal, a first terminal, and second terminal. A second circuit provides an output current to an output node. The second circuit includes a second transistor with a control terminal, a first terminal, and second terminal. The biasing circuit includes a third transistor with a control terminal, a first terminal, and second terminal. The biasing circuit also includes a fourth transistor with a control terminal, a first terminal, and second terminal. The biasing circuit provides a voltage at the first terminal of the third transistor and a voltage at the control terminal of the second transistor so that a voltage at the first terminal of the second transistor and a voltage at the second terminal of the first transistor match.

Abstract: A current source for providing matched currents at low and variable bias voltages. The current source includes a first circuit, a second circuit, and a biasing circuit. The first circuit provides a first current. The first circuit includes a first transistor with a control terminal, a first terminal, and second terminal. A second circuit provides an output current to an output node. The second circuit includes a second transistor with a control terminal, a first terminal, and second terminal. The biasing circuit includes a third transistor with a control terminal, a first terminal, and second terminal. The biasing circuit also includes a fourth transistor with a control terminal, a first terminal, and second terminal. The biasing circuit provides a voltage at the first terminal of the third transistor and a voltage at the control terminal of the second transistor so that a voltage at the first terminal of the second transistor and a voltage at the second terminal of the first transistor match.

Abstract: A current source for providing matched currents at low and variable bias voltages. The current source includes a first circuit, a second circuit, and a biasing circuit. The first circuit provides a first current. The first circuit includes a first transistor with a control terminal, a first terminal, and second terminal. A second circuit provides an output current to an output node. The second circuit includes a second transistor with a control terminal, a first terminal, and second terminal. The biasing circuit includes a third transistor with a control terminal, a first terminal, and second terminal. The biasing circuit also includes a fourth transistor with a control terminal, a first terminal, and second terminal. The biasing circuit provides a voltage at the first terminal of the third transistor and a voltage at the control terminal of the second transistor so that a voltage at the first terminal of the second transistor and a voltage at the second terminal of the first transistor match.

Abstract: A preferred embodiment of an integrated semiconductor device includes a semiconductor die having a hole therethrough. A paddle member includes a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole. A cap layer is bonded to the semiconductor die to completely cover the hole, the paddle member, and the handle member. The second surface of the semiconductor die is bonded to the lead frame.

Abstract: A protection circuit for a semiconductor switch for switching a load is disclosed. Control circuitry is used for switching the semiconductor switch on in response to a switching signal and for switching the semiconductor switch off in response to a deactivation signal. A deactivation circuit is used for generating the deactivation signal. An overvoltage detector circuit responsive to a voltage at an output of the semiconductor switch that exceeds a predetermined value is used for generating an overvoltage signal. The overvoltage detector circuit includes a Zener diode that has its cathode coupled through a resistor to the output of the semiconductor switch and its anode coupled to the collector of the diode connected transistor. A first logic circuit is used for causing the deactivation circuit to generate the deactivation signal in response to the switching signal and the overvoltage signal.

Abstract: A protection circuit for a semiconductor switch for switching a load is disclosed. Control circuitry is used for switching the semiconductor switch on in response to a switching signal and for switching the semiconductor switch off in response to a deactivation signal. A deactivation circuit is used for generating the deactivation signal. An overvoltage detector circuit responsive to a voltage at an output of the semiconductor switch that exceeds a predetermined value is used for generating an overvoltage signal. The overvoltage detector circuit includes a Zener diode that has its cathode coupled through a resistor to the output of the semiconductor switch and its anode coupled to the collector of the diode connected transistor. A first logic circuit is used for causing the deactivation circuit to generate the deactivation signal in response to the switching signal and the overvoltage signal.

Abstract: A preferred embodiment of an integrated semiconductor device includes a semiconductor die having a hole therethrough. A paddle member includes a handle member connected between the paddle member and the semiconductor die to suspend the paddle member in the hole. A cap layer is bonded to the semiconductor die to completely cover the hole, the paddle member, and the handle member. The second surface of the semiconductor die is bonded to the lead frame.

Abstract: An integrated circuit is shown in which provision is made for terminating or locking out the operating circuitry when the supply voltage has fallen below a level that can cause anomalous or unreliable operation. Certain selected transistors are provided with saturation sensors which operate to produce a current when the transistors go into collector saturation. When any of the sensors indicates the onset of saturation, clamping circuitry is energized to provide lock out. In addition, a temperature compensated dummy bandgap circuit is included to sense extremely low supply voltages and provide the lockout function under conditions where a reliable saturation indication might not be available.

Abstract: A voltage regulator circuit is set forth in which the series pass transistor has its high impedance (collector/drain) electrode connected to the output terminal and a shunt transistor has its low impedance (emitter/source) electrode connected to the output terminal. The circuit is arranged to ensure that the shunt transistor is always conductive so that its low impedance electrode will stabilize the operation of the circuit without requiring any external components. The circuit can be fabricated in either bipolar or CMOS form and a low dropout configuration is employed.

Abstract: An integrated circuit is disclosed having a thermal shutdown capability. A single chip bonding pad is coupled to a circuit that will operate the bonding pad at a low potential for normal conditions and will pull it high when a temperature threshold is crossed. Thus, the normally low bonding pad provides a temperature flag. The bonding pad is also coupled to a latch that will hold it high and to a lockout circuit that acts to disable the heat producing chip circuitry. Therefore, when the bonding pad is once driven high the circuits are locked out and will remain out until a start up command is present. This is achieved by either momentarily removing the power supply or by pulling the bonding pad low. Both manual and computer control of the circuit is disclosed.

Abstract: An isolation diffusion process monitor is disclosed. A monitor resistor which has one end terminated in an isolation diffusion region is measured during the wafer fabrication process. Its value will be a function of the lateral surface extent of the isolation diffusion.

Abstract: A circuit is described for trimming a monolithic PN junction isolated silicon IC. The value of a moderate value resistance network is translated to a current that can be made to have a predetermined temperature coefficient and can be applied to the IC. A voltage regulator is shown in which the output voltage and the temperature coefficient can be independently adjusted both at wafer sort and after assembly.

Abstract: A voltage regulator including a current regulator for maintaining predetermined currents in the voltage regulator is disclosed. The voltage regulator includes an output terminal for providing an output voltage; an adjustment terminal; and a control circuit connected to the output terminal at a level that differs from the voltage at the adjustment terminal by a predetermined voltage difference. The control circuit of the voltage regulator includes a resistive divider coupled between the output terminal and the adjustment terminal; a pair of transistors having their collectors connected in common and their bases respectively coupled to the resistive divider to provide a portion of the voltage difference between the output terminal and the adjustment terminal across their bases.

Abstract: A monolithic integrated circuit having a plurality of transistors arranged in groups to comprise sources of binary weighted currents, each group being disposed about a common center of distribution, so as to minimize thermal perturbations of transistor function.