Patents by Inventor Robert A. Rizzuto
Robert A. Rizzuto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9464365Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: GrantFiled: February 6, 2014Date of Patent: October 11, 2016Assignee: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham, Matthew A. Simpson
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Publication number: 20140335308Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: ApplicationFiled: July 25, 2014Publication date: November 13, 2014Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham, Matthew A. Simpson
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Publication number: 20140234568Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: ApplicationFiled: February 6, 2014Publication date: August 21, 2014Applicant: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham, Matthew A. Simpson
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Patent number: 8740670Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: GrantFiled: May 15, 2012Date of Patent: June 3, 2014Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham, Matthew A. Simpson
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Publication number: 20140094094Abstract: A method of forming a substrate is performed by grinding a substrate using abrasives so that both major surfaces of the substrate achieve desired flatness, smoothness, or both. In an embodiment, a coarser abrasive is used to grind one major surface, while a finer abrasive is simultaneously used to grind the other major surface. A single grinding step can used to produce a substrate having opposing surfaces of different surface roughnesses. This may help to eliminate a typical second downstream fine polishing step used in the prior art. Embodiments can be used with a wide variety of substrates, including sapphire, silicon carbide and gallium nitride single crystal structures grown by various techniques.Type: ApplicationFiled: September 18, 2013Publication date: April 3, 2014Inventors: Robert A. Rizzuto, Ajay Krishnan, Christopher Arcona, Anand Tanikella
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Patent number: 8455879Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: GrantFiled: December 21, 2007Date of Patent: June 4, 2013Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Brahmanandam V. Tanikella, Matthew A. Simpson, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Ramanujam Vedantham
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Publication number: 20120289126Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: ApplicationFiled: May 15, 2012Publication date: November 15, 2012Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Veddantham
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Patent number: 8197303Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: GrantFiled: December 21, 2007Date of Patent: June 12, 2012Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham
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Patent number: 7956356Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: GrantFiled: December 21, 2007Date of Patent: June 7, 2011Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Brahmanandam V. Tanikella, Matthew A. Simpson, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham
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Patent number: 7919815Abstract: Wafer suitable for semiconductor deposition application can be fabricated to have low bow, warp, total thickness variation, taper, and total indicated reading properties. The wafers can be fabricated by cutting a boule to produce rough-cut wafers, lapping the rough-cut wafers, etching the lapped wafers to remove a defect, deformation zone and relieve residual stress, and chemically mechanically polishing the etched wafers to desired finish properties. Etching can be performed by immersion in a heated etching solution comprising sulfuric acid or a mixture of sulfuric and phosphoric acids. A low pH slurry utilized in chemical mechanical polishing of the spinel wafer can comprise ?-Al2O3 and an organic phosphate.Type: GrantFiled: March 1, 2006Date of Patent: April 5, 2011Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Brahmanandam Tanikella, Elizabeth Thomas, Frank L. Csillag, Palaniappan Chinnakaruppan, Jadwiga Jaroniec, Eric Virey, Robert A. Rizzuto
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Publication number: 20080164578Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: ApplicationFiled: December 21, 2007Publication date: July 10, 2008Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Brahmanandam V. Tanikella, Matthew A. Simpson, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham
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Publication number: 20080166951Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: ApplicationFiled: December 21, 2007Publication date: July 10, 2008Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Brahmanandam V. Tanikella, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Isaac K. Cherian, Ramanujam Vedantham
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Publication number: 20080164458Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.Type: ApplicationFiled: December 21, 2007Publication date: July 10, 2008Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.Inventors: Brahmanandam V. Tanikella, Matthew A. Simpson, Palaniappan Chinnakaruppan, Robert A. Rizzuto, Ramanujam Vedantham