Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: The present disclosure relates to a microelectronics package with vertically stacked flip-chip dies, and a process for making the same. The disclosed microelectronics package includes a module board, a first thinned flip-chip die with a through-die via, a second flip-chip die with a package contact at the bottom, and a mold compound. Herein, a top portion of the through-die via is exposed at top of the first thinned flip-chip die. The first thinned flip-chip die and the mold compound reside over the module substrate. The mold compound surrounds the first thinned flip-chip die and extends above the first thinned flip-chip die to define an opening. The second flip-chip die, which has a smaller plane size than the first thinned flip-chip die, resides within the opening and is stacked with the first thinned flip-chip die by coupling the package contact to the exposed top portion of the through-die via.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: The invention relates to a method for operating an internal combustion engine installed in a vehicle, in particular a diesel engine, in which the instantaneous concentration of a pollutant contained in the exhaust gas, in particular the NOx concentration in the exhaust gas, is measured or calculated in the flow direction after an exhaust gas aftertreatment. Using the determined pollutant concentration, the predefined distance- and/or power-based compliance with pollutant limiting values in mg/km or mg/kWh are monitored by means of specifically influencing the operating parameters of the internal combustion engine and/or an exhaust gas after treatment system in regulated form.

Abstract: Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

Abstract: Embodiments of electronic devices, such as integrated circuit (IC) packages are disclosed. In one embodiment, an electronic device includes a first substrate and a second substrate. The first substrate has a first substrate body and a first inductor portion integrated into the first substrate body. Additionally, the second substrate comprises a second substrate body and a second inductor portion integrated into the second substrate body. The second substrate is mounted on the first substrate such that such that the second inductor portion is positioned over the first inductor portion and such that the second inductor portion is electrically connected to the first inductor portion so that the first inductor portion and the second inductor portion form a three dimensional (3D) inductor. By using two substrates, the 3D inductor can be increased in height while still allowing the substrates to be miniaturized and standardized for an IC package.

Abstract: The present disclosure relates to an air-cavity module having a thinned semiconductor die and a mold compound. The thinned semiconductor die includes a back-end-of-line (BEOL) layer, an epitaxial layer over the BEOL layer, and a buried oxide (BOX) layer with discrete holes over the epitaxial layer. The epitaxial layer includes an air-cavity, a first device section, and a second device section. Herein, the air-cavity is in between the first device section and the second device section and directly in connection with each discrete hole in the BOX layer. The mold compound resides directly over at least a portion of the BOX layer, within which the discrete holes are located. The mold compound does not enter into the air-cavity through the discrete holes.

Abstract: An optical fiber production system is provided which includes a slow-cooling device and a purge device positioned above the slow-cooling device. The purge device includes a tube defining an inlet. An optical fiber extends through the slow-cooling device and the purge device. The purge device is configured to inject a purge gas through the inlet and against the optical fiber.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: A broadband power amplifier circuit is provided. The broadband power amplifier circuit includes an amplifier circuit configured to amplify a radio frequency (RF) signal to an output power based on a bias voltage and a supply voltage. Given that the output power of the RF signal may rise and fall from time to time, the broadband power amplifier circuit is configured to opportunistically increase or decrease the bias voltage in a defined future time (e.g., a future time slot or a future symbol duration) based on the output power in the defined future time. When necessary, the broadband power amplifier may be further configured to adjust the supply voltage and/or attenuate the RF signal based on the output power. As such, it may be possible to maintain class-A operation mode for the amplifier circuit. As a result, the amplifier circuit may maintain linearity and avoid memory effect with improved efficiency.

Abstract: Vaporizers and systems for vaporizing liquid precursor for forming glass optical fiber preforms are provided. The vaporizer includes an expansion chamber at least partially enclosed by a side wall, the expansion chamber comprising an upper end and a lower end with the side wall disposed between the upper end and the lower end. The vaporizer further includes a closed-loop liquid delivery conduit positioned in the expansion chamber proximate to the upper end of the expansion chamber, wherein the closed-loop liquid delivery conduit comprises a plurality of nozzles oriented to direct a spray of liquid precursor onto an inner surface of the side wall. Further, the vaporizer includes at least one supply conduit positioned proximate the upper end of the expansion chamber and coupled to the closed-loop liquid delivery conduit, and a vapor delivery outlet coupled to the expansion chamber and configured to direct vaporized liquid precursor from the expansion chamber.

Abstract: A radio frequency (RF) front-end apparatus is provided. In examples discussed herein, the RF front-end apparatus can be configured to communicate RF signals in millimeter wave (mmWave) RF frequencies (e.g., ?12 GHz). The RF front-end apparatus includes an RF front-end circuit and an antenna element. The RF front-end circuit includes a transmit path and a receive path for transmitting and receiving RF signals, respectively. The antenna element includes an input port(s) and an output port(s) that are coupled to the transmit path and the receive path, respectively. The antenna element can be configured to enable impedance matching between the input port(s) and the transmit path, as well as between the output port(s) and the receive path. As a result, it may be possible to reduce insertion losses in the RF front-end circuit, thus helping to improve performance of the RF front-end apparatus, particularly in support of mmWave communications.

Abstract: A vehicle door includes a trim panel coupled to a frame. A single-piece armrest substrate is coupled with the frame. The armrest substrate is a three-dimensionally printed member having interior walls that are printed within the armrest substrate according to a virtual force model generated during a virtual impact scenario. The interior walls define a plurality of voids defined within the armrest substrate.

Abstract: Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar and 3D (e.g.

Abstract: A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates.

Abstract: A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N?1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X?1 for switch cell 2 through switch cell N.

Abstract: A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions.

Abstract: The present disclosure relates to a semiconductor package with reduced parasitic coupling effects, and a process for making the same. The disclosed semiconductor package includes a thinned flip-chip die and a first mold compound component with a dielectric constant no more than 7. The thinned flip-chip die includes a back-end-of-line (BEOL) layer with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, a device layer over the upper surface of the BEOL layer, and a buried oxide (BOX) layer over the device layer. The BEOL layer includes a first passive device and a second passive device, which are underlying the first surface portion and not underlying the second surface portion. Herein, the first mold compound component extends through the BOX layer and the device layer to the first surface portion.

Abstract: Herein a chainsaw (1) is disclosed comprising a guide bar (3) and a chain (5) moveably arranged around the guide bar (3). The chainsaw (1) comprises an motor (9) comprising a motor shaft (11), wherein the motor (9) is configured to drive the chain (5) via the motor shaft (11). The chainsaw (1) further comprises a tension estimation arrangement (13) configured to sense a load on the motor shaft (11), and configured to estimate the tension of the chain (5) around the guide bar (3) on the basis of the sensed load on the motor shaft (11). The present disclosure further relates to a method of estimating tension of a chain (5) of a chainsaw (1).