Abstract: The present disclosure relates to a novel, engineered enveloped vector that can be used for gene delivery. The engineered enveloped vector comprises an engineered envelope comprising: (a) a viral envelope protein and optionally, (b) a non-viral membrane-bound protein. The present disclosure also provides a method of making and using the engineered enveloped vector.

Abstract: A modular structure supports elevated rail segments for delivering electrical power to a moving work machine, such as a hauler at a mining site. Opposite ends of a roadside barrier contain complementary tubular couplers arranged vertically, one having a first diameter supported by an arm and the other having a larger second diameter and a vertical slot. Couplers on adjacent barriers can be mated together concentrically along a central axis. The mated couplers help restrict longitudinal displacement, lateral displacement, slope change, and lateral rotation between adjacent barriers during placement. One barrier may be used as a temporary alignment structure to position barriers spaced altematingly along a haul route for the work machine.

Abstract: A combustion engine exhaust after treatment system mount, including a body, with a first mounting position, a second mounting position, and a foot for mounting the body to an engine or wall, the first mounting position having a first mounting surface, the second mounting position having a second mounting surface, the first mounting position having a first longitudinal axis, and the second mounting position having a second longitudinal axis, the first axis positioned substantially parallel to the second axis.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.

Abstract: In one aspect the present invention provides a method for manufacturing a silicon carbide semiconductor device. A layer of silicon dioxide is formed on a silicon carbide substrate and nitrogen is incorporated at the silicon dioxide/silicon carbide interface. In one embodiment, nitrogen is incorporated by annealing the semiconductor device in nitric oxide or nitrous oxide. In another embodiment, nitrogen is incorporated by annealing the semiconductor device in ammonia. In another aspect, the present invention provides a silicon carbide semiconductor device that has a 4H-silicon carbide substrate, a layer of silicon dioxide disposed on the 4H-silicon carbide substrate and a region of substantial nitrogen concentration at the silicon dioxide/silicon carbide interface.

Abstract: A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.

Abstract: An ion beam analysis system that creates multidimensional maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the secondary electrons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted secondary electrons are collected in a strong electric field perpendicular to the sample surface and (optionally) projected and refocused by the electron lenses found in a photon emission electron microscope, amplified by microchannel plates and then their exact position is sensed by a very sensitive X Y position detector. Position signals from this secondary electron detector are then correlated in time with nuclear, atomic or electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these secondary electrons in the fit place.

Abstract: A method and apparatus for determining material properties such as composition and structure of the surfaces of bulk materials and thin film sample members using time-of-flight medium energy particle scattering is provided. The method and apparatus are based upon scattering particles from a sample material or ejecting particles from the sample material. The particles may include both uncharged particles and charged particles. Particles are scattered into a chamber from a sample surface using known methods. The particles pass through the first of two grids which grid is held at ground potential and which limits the electrostatic field. The particles then pass through a very thin carbon foil which is held at a potential of -3kV. On passing through the carbon foil the particles emit secondary electrons. An electric field is created between the carbon foil and the second grid, which accelerates the secondary electrons. The electrons strike a first microchannel plate detector and this generates a start pulse.

Abstract: The present meter is characterized by its very accurate cosine response to urrent vector components of fluid (air or water) velocity parallel to the rotational axes of its propeller-like flow sensors. Structurally, it employs two flow sensors rotatably mounted on a rod or `sting` carried by a casing. Each sensor includes a pair of back-to-back propellers or fans mounted on a single axial shaft rotatably supported by the rod. The rotational axes of the two flow sensors are normal one to the other and also normal to the axis of the rod. Rotation of the fans activates a switch-like arrangement electrically coupled to an up-down counter carried in the casing. Blade rotation in one direction yields an `up` count and vice versa.