Abstract: An improved high power vertical MOS transistor is disclosed. The channel region of the transistor is electrically connected to the source terminal. The active region of the transistor comprises a plurality of finger-like mesas extending at approximately right angles from a second palm-like mesa. The finger-like mesas form the active regions of the transistor with the palm-like mesa serving as a support for the source bonding pad. Thin metallic stripes extend along the edges of the finger-like mesas to form the gate of the transistor. A metallic layer contacts the gate and extends up at least one edge and along the top of a substantially rectangular mesa. The finger-like, palm-like and rectangular mesas are supported by a common substrate. The portion of the metallic layer overlying the top of the rectangular mesa serves as the gate bonding pad. Electrical contact to the drain region of the transistor is made through the supporting substrate.

Abstract: A charge storage device of the type in which a target electrode provides a plurality of spatially distributed charge storage sites formed on an output side of a semiconductor wafer with means associated with the storage sites for sensing and converting the charge on the storage sites into an electrical signal. Input excitation is directed onto the other or input side of the semiconductor wafer and may be in the form of electrons or light capable of generating electron-hole pairs within the semiconductor wafer which diffuse through to the storage sites. The output side of the semiconductor wafer is provided with an apertured insulating layer with a reading electron beam making contact through the apertures in the insulating coating to the spatially distributed storage sites.