Abstract: A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of cylindrically-shaped dielectric regions disposed in the semiconductor layer. The cylindrically-shaped dielectric regions extend in a vertical direction from a top surface of the semiconductor layer downward. Adjacent ones of the cylindrically-shaped dielectric regions being laterally separated along a common diametrical axis by a narrow region of the semiconductor layer having a first width. Each dielectric region has a cylindrically-shaped, conductive field plate member centrally disposed therein. The cylindrically-shaped, conductive field plate member extends in the vertical direction from the top surface downward to near a bottom of the dielectric region. The dielectric region laterally separates the cylindrically-shaped, conductive field plate member from the narrow region.

Abstract: Example articles of manufacture, methods, and systems facilitate having encryption policy follow an article of manufacture like a tape cartridge. One example article of manufacture includes a media portion (e.g., tape) and a non-media portion (e.g., housing). The media portion is configured to store machine readable information. The article of manufacture could be a tape, a disk, a memory, and other computer readable media. The article of manufacture also includes an encryption policy information indicator. The encryption policy information indicator can be configured to store information that controls an encryption policy associated with the article of manufacture. Therefore, encryption policy can, for example, follow a tape cartridge rather than be resident solely in a controlling application (e.g., tape library).

Abstract: The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.

Abstract: The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.

Abstract: Example articles of manufacture, methods, and systems facilitate having encryption policy follow an article of manufacture like a tape cartridge. One example article of manufacture includes a media portion (e.g., tape) and a non-media portion (e.g., housing). The media portion is configured to store machine readable information. The article of manufacture could be a tape, a disk, a memory, and other computer readable media. The article of manufacture also includes an encryption policy information indicator. The encryption policy information indicator can be configured to store information that controls an encryption policy associated with the article of manufacture. Therefore, encryption policy can, for example, follow a tape cartridge rather than be resident solely in a controlling application (e.g., tape library).

Abstract: Methods, kits, systems, and multilayer transfer media for transferring a substance to and from an array are disclosed herein. Also disclosed herein are methods of detecting a substance that has been transferred to an array.

Abstract: The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.

Abstract: The invention provides novel human mitochondrial polymorphisms, and probes and primers for detecting the same. Detection of such polymorphisms is useful in a variety of fields such as forensic analysis, epidemiology and preventive medicine.

Abstract: The present invention relates to rapid dissolve thin film drug delivery compositions for the oral administration of active components. The active components are provided as taste-masked or controlled-release coated particles uniformly distributed throughout the film composition. The compositions may be formed by wet casting methods, where the film is cast and controllably dried, or alternatively by an extrusion method.

Abstract: The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably, the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film. The films contain a polymer component which includes polyethylene oxide, optionally blended with at least one additional polymer. The films may alternatively contain a polymer component which includes polyvinyl alcohol, optionally blended with at least one additional polymer. The films also may contain a pharmaceutical and/or cosmetic active agent.

Abstract: According to the present invention, semiconductor device breakdown voltage can be increased by embedding field shaping regions within a drift region of the semiconductor device. A controllable current path extends between two device terminals on the top surface of a planar substrate, and the controllable current path includes the drift region. Each field shaping region includes two or more electrically conductive regions that are electrically insulated from each other, and which are capacitively coupled to each other to form a voltage divider dividing a potential between the first and second terminals. One or more of the electrically conductive regions are isolated from any external electrical contact. Such field shaping regions can provide enhanced electric field uniformity in current-carrying parts of the drift region, thereby increasing device breakdown voltage.

Abstract: The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film.

Abstract: One or more vertical DMOS transistors, such as trench FETS, are formed between opposing floating poly-filled trench portions. The opposing trench portions may include two parallel trenches, rectangular trenches, hexagonal trenches, octagonal trenches, circular trenches, or other shapes. The floating trench portions are capacitively coupled to assume a potential somewhere between the high drain voltage (below the trenches) and the body voltage (near the top of the trenches). The floating trench portions will have a potential below the drift region and deplete the drift region. The depletion regions caused by the opposing trench portions will merge under the gate with a sufficiently high drain voltage. The electric field lines in the drift region will be shaped to increase the breakdown voltage of the device.

Abstract: This invention relates to achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate regions and girds these regions from at least one side and preferably from both or all sides. A series capacitive structure with a biased top element and a number of floating elements is disposed in the insulating trench, and the intermediate region is endowed with a capacitive property that is chosen to establish a capacitive interaction or coupling between the series capacitive structure and the intermediate region so that the breakdown voltage VBD is maximized and on-resistance is minimized. A second series capacitive structure disposed in a second insulating trench can be employed to terminate the device.

Abstract: Floating trenches are arranged in the layout of a single DMOS transistor or an array of DMOS transistors, the array forming a single power transistor. The trenches run perpendicular to the gate width direction either outside the transistor(s) or between rows of the transistors. The floating trenches are at a potential between the drain voltage and the substrate voltage (usually ground). The potentials of the opposing trenches cause merging depletion regions under the gate in the drift region. This merging shapes the field lines so as to increase the breakdown voltage of the transistor and provide other advantages. The technique is applicable to both lateral and vertical DMOS transistors.

Abstract: This invention relates to an apparatus and method for achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate regions and girds these regions from at least one side and preferably from both or all sides. A series capacitive structure with a biased top element and a number of floating elements is disposed in the insulating trench, and the intermediate region is endowed with a capacitive property that is chosen to establish a capacitive interaction or coupling between the series capacitive structure and the intermediate region so that the breakdown voltage VBD is maximized and on-resistance is minimized.

Abstract: The present invention provides Fibroblast Growth Factor-23 (FGF-23) polypeptides and nucleic acid molecules encoding the same. The invention also provides selective binding agents, vectors, host cells, and methods for producing FGF-23 polypeptides. The invention further provides pharmaceutical compositions and methods for the diagnosis, treatment, amelioration, and/or prevention of diseases, disorders, and conditions associated with FGF-23 polypeptides.

Abstract: An oral dosage delivery vehicle comprising an edible film including a uniformly distributed active ingredient, wherein said film comprises dosage units releasably joined by one or more weakened sections, which permit said dosage units to be detached from said film.

Abstract: The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film.

Abstract: The present invention includes methods and compositions relating to locus-specific arrays. More specifically, this invention includes methods for making locus-specific arrays from universal arrays in situ, the custom arrays made using those methods, and methods of using the custom arrays to detect target nucleotides.