Patents by Inventor Robert Amantea

Robert Amantea has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6249001
    Abstract: An infrared imager includes an array of capacitance sensors that operate at room temperature. Each infrared capacitance sensor includes a deflectable first plate which expands due to absorbed thermal radiation relative to a non-deflectable second plate. In one embodiment each infrared capacitance sensor is composed of a bi-material strip which changes the position of one plate of a sensing capacitor in response to temperature changes due to absorbed incident thermal radiation. The bi-material strip is composed of two materials with a large difference in thermal expansion coefficients.
    Type: Grant
    Filed: April 8, 1999
    Date of Patent: June 19, 2001
    Assignee: Sarnoff Corporation
    Inventors: Donald Jon Sauer, Ramon Ubaldo Martinelli, Robert Amantea, Peter Alan Levine
  • Patent number: 6181008
    Abstract: An integrated circuit system includes a substrate of an electrical insulating material having a surface. Mounted on the surface of the substrate is an IC, a semiconductor piece having therein a circuit, such as a microprocessor, having a plurality of functional blocks. Also mounted on the substrate are a plurality of power supply chips. Each of the power supply chips is connected through conductors and vias in the substrate to a separate functional block on the IC semiconductor piece. Each of the power supply chips forms part of a circuit, such as a DC-DC converter, which is capable of reducing a voltage supplied thereto to a lower voltage suitable for the particular functional block to which the particular power supply chip is connected. Thus, a single relatively large voltage fed to the power supply chips through conductors on the substrate is reduced by each power supply chip to a lower voltage suitable for the particular functional block of the IC semiconductor piece.
    Type: Grant
    Filed: June 8, 1999
    Date of Patent: January 30, 2001
    Assignee: Sarnoff Corporation
    Inventors: Leslie Ronald Avery, Robert Amantea, Lawrence Alan Goodman
  • Patent number: 6172492
    Abstract: A dual mode converter is provided that may be operated as a variable-frequency, naturally-commutated controller in a Zero-Voltage-Switching mode and as a fixed-off-time controller in a Fixed-Off-Time mode. The converter includes four functional elements. A reference and biases element generates voltage references and biases utilized to determine various signal states. A Timing element generates a fixed off time signal and a voltage ramp signal utilized to create the dual modes of operation. A Catastrophic-Event element detects events that cause the converter output be inhibited and the controller to be restarted. A Mode Detection and Pulse Width Modulation element determines the mode of operation for the converter based on signal inputs from the other functional elements and modulates the output accordingly. In a primary mode, the controller utilizes variable frequency operation to deliver primary power. In a standby mode, the controller utilizes fixed frequency operation to provide low power (less than 5W).
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: January 9, 2001
    Assignees: Sarnoff Corporation, Daewoo Electronics Co., Ltd.
    Inventors: Timothy Allen Pletcher, Robert Amantea, Min-Sung Yang, Heon-Kyu Kim, Jae-Hong Joo, Bok-Man Kim
  • Patent number: 6140646
    Abstract: An apparatus and process for forming an infrared imager suitable for night vision surveillance systems. The infrared imager includes an array of field emissive devices formed within a semiconductor substrate such as a silicon wafer. The field emissive devices each include silicon emitters formed within the silicon substrate and a micro-cantilever including a conductive gate plate suspended above the emitters. The micro-cantilever is formed of a bi-material and bends in response to absorbed infrared radiation, locally changing an electric field applied to the structure, and therefore, the emission current of the emitters. Electrons emitted from the emitters form a visible image on a phosphor plate.
    Type: Grant
    Filed: August 5, 1999
    Date of Patent: October 31, 2000
    Assignee: Sarnoff Corporation
    Inventors: Heinz Hermann Busta, Robert Amantea
  • Patent number: 6033544
    Abstract: The present invention provides a liquid distribution system, which is useful in a number of contexts, including in accomplishing various synthetic, diagnostic and drug screening reactions. The distribution system can comprise an alpha reservoir and a beta reservoir, a first set of parallel and adjacent first and second feeder channels and a second set of parallel and adjacent third and fourth feeder channels which are offset from the first and second feeder channels, wherein (a) the first and third feeder channels are connected to the alpha reservoir via a first connector channel that is situated above or below the second and fourth feeder channels and are independent of the beta reservoir and (b) the second and fourth feeder channels are connected to the beta reservoir via a second connector channel that is situated above or below the first and third feeder channels and are independent of the alpha reservoir. The distribution system is preferably a microscale distribution system.
    Type: Grant
    Filed: November 7, 1996
    Date of Patent: March 7, 2000
    Assignee: Sarnoff Corporation
    Inventors: Robert Demers, Sterling Eduard McBride, Christina Marie Knoedler, Robert Amantea, Richard Moroney, Satyam Choudary Cherukuri, Pamela Kay York, Paul L. Brown
  • Patent number: 6028615
    Abstract: An inexpensive, robust plasma discharge emitter that repeatably creates a patterned charge on a substrate. To facilitate highly accurate charge deposition, each emitter contains a plasma well for confining the plasma within the emitter. Additionally, a plurality of emitters are arranged in an array to provide a practical charge patterning device. Furthermore, to fabricate an emitter or an array of emitters, a relatively low-cost, repeatable method of fabrication is used that relies upon conventional integrated circuit fabrication techniques.
    Type: Grant
    Filed: August 18, 1997
    Date of Patent: February 22, 2000
    Assignee: Sarnoff Corporation
    Inventors: Timothy Allen Pletcher, Vipulkumar Kantilal Patel, Robert Amantea
  • Patent number: 5965886
    Abstract: An infrared imager includes an array of capacitance sensors that operate at room temperature. Each infrared capacitance sensor includes a deflectable first plate which expands due to absorbed thermal radiation relative to a non-deflectable second plate. In one embodiment each infrared capacitance sensor is composed of a bi-material strip which changes the position of one plate of a sensing capacitor in response to temperature changes due to absorbed incident thermal radiation. The bi-material strip is composed of two materials with a large difference in thermal expansion coefficients.
    Type: Grant
    Filed: March 14, 1997
    Date of Patent: October 12, 1999
    Assignee: Sarnoff Corporation
    Inventors: Donald Jon Sauer, Ramon Ubaldo Martinelli, Robert Amantea, Peter Alan Levine
  • Patent number: 5844238
    Abstract: An infrared imager includes an array of capacitance sensors that operate at room temperature. Each infrared capacitance sensor includes a deflectable first plate which expands due to absorbed thermal radiation relative to a non-deflectable second plate. In one embodiment each infrared capacitance sensor is composed of a bi-material strip which changes the position of one plate of a sensing capacitor in response to temperature changes due to absorbed incident thermal radiation. The bi-material strip is composed of two materials with a large difference in thermal expansion coefficients.
    Type: Grant
    Filed: March 27, 1996
    Date of Patent: December 1, 1998
    Assignee: David Sarnoff Research Center, Inc.
    Inventors: Donald Jon Sauer, Ramon Ubaldo Martinelli, Robert Amantea, Peter Alan Levine
  • Patent number: 4388634
    Abstract: A transistor having increased reverse second breakdown capabilities includes a collector formed with a high resistivity region including a channel portion adjacent the central portion of the emitter and with a lower resistivity region forming an interface around said channel portion. The second region is arranged to include a portion located laterally inwardly of the outer edges of the emitter so that a preferential current path is provided that defocuses the minority carriers injected by the emitter during the time the transistor is being switched off.
    Type: Grant
    Filed: December 4, 1980
    Date of Patent: June 14, 1983
    Assignee: RCA Corporation
    Inventors: Robert Amantea, Carl F. Wheatley, Jr.