Abstract: Some examples include determining the condition of photovoltaic modules at one or more points in time, in particular using line-scanning luminescence imaging techniques. One or more photoluminescence and/or electroluminescence images of a module may be acquired and processed using one or more algorithms to provide module data, including the detection of defects that may cause or may have caused module failure. Additionally, some examples include determining the condition of photovoltaic modules, such as throughout the production, transport, installation and service life of the photovoltaic modules.

Abstract: Some examples include determining the condition of photovoltaic modules at one or more points in time, in particular using line-scanning luminescence imaging techniques. One or more photoluminescence and/or electroluminescence images of a module may be acquired and processed using one or more algorithms to provide module data, including the detection of defects that may cause or may have caused module failure. Additionally, some examples include determining the condition of photovoltaic modules, such as throughout the production, transport, installation and service life of the photovoltaic modules.

Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure.

Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure.

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure.

Abstract: Methods and systems are presented for acquiring photoluminescence images (2) of silicon solar cells and wafers (4) as they progress along a manufacturing line (36). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, (8) for instance by a flash lamp (50) while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.

Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

Abstract: Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

Abstract: Disclosed is a method (300) of manufacturing at least one semiconductor photovoltaic cell or module and for classifying semiconductor material. In one implementation (500) the method involves luminescence imaging a wafer at each of a plurality of stages (312-324) of the manufacturing process, and comparing at least two images obtained from the imaging step in respect of the same wafer to identify the incidence or growth of a manufacturing process induced fault. The wafer is removed (351-356) from the manufacturing process (310) where a process induced fault is identified that exceeds a predetermined level of acceptability or the fault may be remedied, or the wafer passed to an alternate manufacturing process to match its characteristics. In an alternate implementation the method comprises classifying semiconductor material.

Abstract: Methods and systems are presented for acquiring photoluminescence images (2) of silicon solar cells and wafers (4) as they progress along a manufacturing line (36). In preferred embodiments the images are acquired while maintaining motion of the samples. In certain embodiments photoluminescence is generated with short pulse, high intensity excitation, (8) for instance by a flash lamp (50) while in other embodiments images are acquired in line scanning fashion. The photoluminescence images can be analysed to obtain information on average or spatially resolved values of one or more sample properties such as minority carrier diffusion length, minority carrier lifetime, dislocation defects, impurities and shunts, or information on the incidence or growth of cracks in a sample.

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specificed emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure.

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure.

Abstract: A method of photoluminence (PL) imaging of a series of silicon wafers, the method including the step of: utilizing incident illumination of a wavelength greater than 808 nm. The present invention further provides a method of analysing silicon semiconductor material utilising various illumination, camera and filter combinations. In some embodiments the PL response is captured by a MOSIR camera. In another embodiment a camera is used to capture the entire PL response and a long pass filter is applied to block a portion of the signal reaching the camera/detector.

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure.

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure.

Abstract: Disclosed is a method (300) of manufacturing at least one semiconductor photovoltaic cell or module and for classifying semiconductor material. In one implementation (500) the method involves luminescence imaging a wafer at each of a plurality of stages (312-324) of the manufacturing process, and comparing at least two images obtained from the imaging step in respect of the same wafer to identify the incidence or growth of a manufacturing process induced fault. The wafer is removed (351-356) from the manufacturing process (310) where a process induced fault is identified that exceeds a predetermined level of acceptability or the fault may be remedied, or the wafer passed to an alternate manufacturing process to match its characteristics. In an alternate implementation the method comprises classifying semiconductor material.

Abstract: Methods and apparatus are presented for monitoring the deposition and/or post-deposition processing of semiconductor thin films using photoluminescence imaging. The photoluminescence images are analysed to determine one or more properties of the semiconductor film, and variations thereof across the film. These properties are used to infer information about the deposition process, which can then be used to adjust the deposition process conditions and the conditions of subsequent processing steps. The methods and apparatus have particular application to thin film-based solar cells.