Patents by Inventor Robert Armitage
Robert Armitage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961941Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.Type: GrantFiled: March 3, 2023Date of Patent: April 16, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11923398Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa. The devices and methods for their manufacture include a thin film transistor (TFT).Type: GrantFiled: November 12, 2020Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11923402Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.Type: GrantFiled: January 25, 2023Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11923401Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.Type: GrantFiled: June 16, 2022Date of Patent: March 5, 2024Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20230420599Abstract: Provided is an LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions have opposite orders of deposition of the n- and p-layers. One light-emitting active region is embedded between the n- and p-layers of the first junction and another light-emitting active region is embedded between the n- and p-layers of the second junction. Contacts are processed such that forward current can be passed in parallel through both of the junctions using a single voltage source. For a given forward current, the LED operates at lower voltage with higher optical flux and efficiency.Type: ApplicationFiled: June 20, 2023Publication date: December 28, 2023Applicant: Lumileds LLCInventor: Robert Armitage
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Publication number: 20230420627Abstract: Provided is a monolithically integrated red green blue (RGB) light emitting diode (LED) array manufactured with a reduced number of mesa etching steps and contact terminals. The LED array may have two or three p-n-junctions grown sequentially on a wafer. One of the p-n junctions has the opposite order of deposition of the n- and p-layers. A light-emitting active region is embedded between the n- and p-layers of each of the p-n junctions. Each active region emits light of different wavelength. The wafer is etched into multi-level mesas, creating two separate voltage terminals and a ground contact to control the bias between particular semiconductor layers. All of the p-n junctions share a common ground contact.Type: ApplicationFiled: June 20, 2023Publication date: December 28, 2023Applicant: Lumileds LLCInventor: Robert Armitage
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Publication number: 20230420426Abstract: Provided is a monolithically integrated red green blue (RGB) light emitting diode (LED) array manufactured with a reduced number of mesa etching steps and contact terminals. The LED array may have two or three p-n-junctions grown sequentially on a wafer. One of the p-n junctions has the opposite order of deposition of the n- and p-layers. A light-emitting active region is embedded between the n- and p-layers of each of the p-n junctions. Each active region emits light of different wavelength. The wafer is etched into multi-level mesas, creating two separate voltage terminals and a ground contact to control the bias between particular semiconductor layers. All of the p-n junctions share a common ground contact.Type: ApplicationFiled: June 20, 2023Publication date: December 28, 2023Applicant: Lumileds LLCInventor: Robert Armitage
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Publication number: 20230420607Abstract: Provided is an LED comprised of a first and a second p-n junction deposited sequentially on the same wafer. The first and second junctions have opposite orders of deposition of the n- and p-layers. One light-emitting active region is embedded between the n- and p-layers of the first junction and another light-emitting active region is embedded between the n- and p-layers of the second junction. Contacts are processed such that forward current can be passed in parallel through both of the junctions using a single voltage source. For a given forward current, the LED operates at lower voltage with higher optical flux and efficiency.Type: ApplicationFiled: June 20, 2023Publication date: December 28, 2023Applicant: Lumileds LLCInventor: Robert Armitage
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Patent number: 11777061Abstract: Described at light emitting diode (LED) devices emitting different colors on the same wafer, which facilitates their integration with close packing density (not requiring transfer of devices from two different wafers to a third substrate module). The LED devices and driving methods allow light of different colors and similar luminance levels to be emitted for given input current.Type: GrantFiled: January 25, 2023Date of Patent: October 3, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20230223490Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.Type: ApplicationFiled: March 3, 2023Publication date: July 13, 2023Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11677043Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired.Type: GrantFiled: September 8, 2022Date of Patent: June 13, 2023Assignee: Lumileds LLCInventors: Isaac Wildeson, Robert Armitage
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Publication number: 20230170379Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.Type: ApplicationFiled: January 25, 2023Publication date: June 1, 2023Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Publication number: 20230138761Abstract: A red LED includes a semiconductor LED layer having an active InGaN layer with intrinsic emission spectrum having LDom in a range of from 580 nm to 620 nm. A filter is positioned over the semiconductor LED layer to filter shorter wavelengths of the intrinsic emission spectrum and shift LDom by between 5 nm to 20 nm to a longer wavelength.Type: ApplicationFiled: April 16, 2021Publication date: May 4, 2023Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11631786Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa.Type: GrantFiled: March 3, 2021Date of Patent: April 18, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11626538Abstract: Described at light emitting diode (LED) devices emitting different colors on the same wafer, which facilitates their integration with close packing density (not requiring transfer of devices from two different wafers to a third substrate module). The LED devices and driving methods allow light of different colors and similar luminance levels to be emitted for given input current.Type: GrantFiled: March 3, 2021Date of Patent: April 11, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11600656Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent and photo-luminescent active regions in the same wafer to provide LEDs with emission spectra that are adjustable after epitaxial growth. The LED device includes a multilayer anode contact comprising a reflecting metal and at least one transparent conducting oxide layer in between the metal and the p-type layer surface. The thickness of the transparent conducting oxide layer may vary for LEDs fabricated with different emission spectra.Type: GrantFiled: March 3, 2021Date of Patent: March 7, 2023Assignee: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson
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Patent number: 11594572Abstract: A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.Type: GrantFiled: June 24, 2021Date of Patent: February 28, 2023Assignee: Lumileds LLCInventors: Isaac Harshman Wildeson, Parijat Pramil Deb, Robert Armitage
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Publication number: 20230006093Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired.Type: ApplicationFiled: September 8, 2022Publication date: January 5, 2023Applicant: Lumileds LLCInventors: Isaac Wildeson, Robert Armitage
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Patent number: 11476386Abstract: Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired.Type: GrantFiled: January 22, 2021Date of Patent: October 18, 2022Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Robert Armitage
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Publication number: 20220310695Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.Type: ApplicationFiled: June 16, 2022Publication date: September 29, 2022Applicant: Lumileds LLCInventors: Robert Armitage, Isaac Wildeson