Abstract: A system for plasma etching or ashing a coating on a substrate includes a plasma chamber, a second electrode, a plasma source coupled to the plasma chamber, a substrate including a coating, and a plasma mask including at least one aperture. The plasma chamber includes a first electrode. The plasma mask is configured to cover the substrate while exposing selected surfaces of the substrate and coating through the at least one aperture. The first electrode and the second electrode are configured to initiate and maintain a plasma within the plasma chamber. The plasma source includes a gas.