Abstract: A plasma processing system used for reactive sputtering may include multiple dual magnetron sputtering (DMS) components. Each DMS component may include a power supply coupled with two electrodes that switch between operation as a cathode and anode and are located within a plasma chamber. The power supply may be configured to operate as a transmitter or receiver power supply. A transmitter power supply may receive a phase-control-input signal that includes a phase offset value and may produce a phase-control-output signal and synchronization signal. The transmitter power supply may send the phase-control-output signal and synchronization signal to a receiver power supply, which may use these signals to synchronize electrode switching with the transmitter power supply and to apply the phase offset.

Abstract: Systems and methods for adaptive plasma ignition are disclosed. A method includes assessing each of N voltage waveforms, wherein the assessing includes: selecting, from among the N voltage waveforms, a particular voltage waveform to apply to a plasma processing chamber, applying, repeatedly, the particular voltage waveform to the plasma processing chamber, wherein each application of the particular voltage waveform results in plasma ignition, and obtaining, each time a plasma is ignited in the plasma chamber, ignition-parameter values of each voltage waveform. An ignition profile may be created and stored in an ignition datastore for the particular voltage waveform, wherein the ignition profile is based upon the ignition-parameter values.

Abstract: Systems and methods for adaptive plasma ignition are disclosed. A method includes assessing each of N voltage waveforms, wherein the assessing includes: selecting, from among the N voltage waveforms, a particular voltage waveform to apply to a plasma processing chamber, applying, repeatedly, the particular voltage waveform to the plasma processing chamber, wherein each application of the particular voltage waveform results in plasma ignition, and obtaining, each time a plasma is ignited in the plasma chamber, ignition-parameter values of each voltage waveform. An ignition profile may be created and stored in an ignition datastore for the particular voltage waveform, wherein the ignition profile is based upon the ignition-parameter values.

Abstract: A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.

Abstract: A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.

Abstract: A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.