Abstract: A novel aspect to the invention is a structural arrangement to widen the Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e. many more WDM channels) across the device response range, which is expanded to ITU standards by use of the twin etalon configuration. A liquid crystal optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber.

Abstract: A novel aspect of the invention is a structural arrangement to widen a Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e. many more WDM channels) across the device response range, which is expanded to ITU standards by use of a twin etalon configuration. A liquid crystal optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e. digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber.

Abstract: An LC optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-Perot gap, thereby enhancing transmission performance of the WDM device. Mechanical techniques are used to widen the Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e.

Abstract: An LC optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-Perot gap, thereby enhancing transmission performance of the WDM device. Mechanical techniques are used to widen the Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e.

Abstract: An LC optical multiplexer according to the present invention is a two-etalon Fabry-Perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-Perot gap, thereby enhancing transmission performance of the WDM device. Mechanical techniques are used to widen the Fabry-Perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e.

Abstract: An LC optical multiplexer according to the present invention is a two-etalon Fabry-perot laser etched into many (>100) sub-etalons in a rectangular array. Each sub-etalon is independently tunable and can be coupled to a distinct fiber. Any single sub-etalon or random combination of sub-etalons is free to be tuned to a particular wavelength corresponding to one of the input channels. This allows for any combination of signals (i.e digital video, data and voice) in a signal broadband channel to be switched to any of several receivers. Wavelength division multiplexing (WDM) is used to combine or separate individual types of signals from a single fiber. Phase-matching coatings are used on the materials within the Fabry-perot gap, thereby enhancing transmission performance of the WDM device. Mechanical techniques are used to widen the Fabry-perot gap beyond a 100-micron LC thickness. The widening permits greatly enhanced spectral discrimination (i.e.

Abstract: A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.

Abstract: A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.

Abstract: A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.

Abstract: An integrated circuit structure for preventing latch-up of an integrated circuit device, such as a dynamic random access memory, that is operated with a negative substrate bias in use of the device. The integrated circuit structure includes a p-type substrate having an n-well region formed therein, with a rectifying junction formed in a lightly doped portion of the n-well region and connected to provide a path to ground for clamping the substrate to ground during power-up conditions. In another embodiment, a rectifying junction formed in a lightly doped portion of the n-well region functions as a diode clamp for a pumped bias voltage for the n-well region.

Abstract: A solid state fabrication technique for controlling the amount of outdiffusion from a three-dimensional film is comprised of the step of providing a first layer of insitu doped film in a manner to define an upper portion and a lower portion. A second layer of undoped film is provided on top of the first layer to similarly define an upper portion and a lower portion. The first and second layers are etched according to a predetermined pattern. The second layer is doped to obtain a desired dopant density which decreases from the upper portion to the lower portion. Outdiffusion of the dopant from the upper portion of the second layer results in the dopant migrating to the lower portion of the second layer. Thus, outdiffusion into the substrate, and the problems caused thereby, are eliminated or greatly reduced.

Abstract: An integrated circuit structure for preventing latch-up of an integrated circuit device, such as a dynamic random access memory, that is operated with a negative substrate bias in use of the device. The integrated circuit structure includes a p-type substrate having an n-well region formed therein, with a rectifying junction formed in a lightly doped portion of the n-well region and connected to provide a path to ground for clamping the substrate to ground during power-up conditions. In another embodiment, a rectifying junction formed in a lightly doped portion of the n-well region functions as a diode clamp for a pumped bias voltage for the n-well region.