Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract: A gas jet deposition method and apparatus includes a plurality of ports to supply plasma to the substrate on which deposition is to occur. A reagent gas is introduced either into the ports or into the expansion chamber. The use of multiple ports results in a much more uniform deposition of material on the substrate. In preferred embodiments, a carrier gas plasma is created using an excitation source such as a microwave power supply.

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract: The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.