Abstract: A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in the substrate of a workpiece is disclosed which may comprise, a multichamber laser system comprising, a first laser unit comprising, a first and second gas discharge chamber; each with a pair of elongated spaced apart opposing electrodes contained within the chamber, forming an elongated gas discharge region; a laser gas contained within the chamber comprising a halogen and a noble gas selected to produce laser light at a center wavelength optimized to the crystallization process to be earned out on the workpiece; a power supply module comprising, a DC power source; a first and a second pulse compression and voltage step up circuit connected to the DC power source and connected to the respective electrodes, comprising a multistage fractional step up transformer having a plurality of primary windings connected in series and a single secondary winding passing through each of the plura

Abstract: Apparatus and method for electrically connecting two closely positioned high voltage modules with little or no bend and without any loops in an electrical interconnecting coaxial cable may have a high voltage connector attached to at least a portion of the cable on at least one end of the cable; a push through high voltage connector receptor within one module; and a disconnection mechanism within the one module adapted to move the high voltage connector and at least a portion of cable to which the high voltage connector is attached through the connector receptor from a contact position to a housed position in a direction away from the other module to which high voltage connection is to be made. The connector receptor may have an open cylindrical connector with a contacting surface contained on the interior wall of the cylindrical connector and an interlock mechanism.

Abstract: An apparatus and method for providing cooling to a magnetic circuit element having a magnetic core disposed around a centrally located core support member having at least one core support member wall is disclosed which may comprise a core support coolant inlet; a core support coolant outlet; a plurality of interconnected coolant flow passages contained within the core support member wall and interconnected and arranged to pass coolant from one coolant flow passage to the next within the core support member wall along a coolant flow path within at least a substantial portion of the core support member wall from the core support coolant inlet to the core support coolant outlet.

Abstract: The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5 mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.

Abstract: An apparatus and method for providing cooling to a magnetic circuit element having a magnetic core disposed around a centrally located core support member having at least one core support member wall is disclosed which may comprise a core support coolant inlet; a core support coolant outlet; a plurality of interconnected coolant flow passages contained within the core support member wall and interconnected and arranged to pass coolant from one coolant flow passage to the next within the core support member wall along a coolant flow path within at least a substantial portion of the core support member wall from the core support coolant inlet to the core support coolant outlet.

Abstract: An apparatus and method for electrically connecting two closely positioned high voltage modules with little or no bend and without any loops in an electrical interconnecting coaxial cable, is disclosed, which may comprise a high voltage connector attached to at least a portion of the cable on at least one end of the cable; a push through high voltage connector receptor within one module; and a disconnection mechanism within the one module adapted to move the high voltage connector and the at least a portion of cable to which the high voltage connector is attached through the connector receptor from a contact position to a housed position in a direction away from the other module to which high voltage connection is to be made. The high voltage connector receptor may comprise an open cylindrical connector with a contacting surface contained on the interior wall of the cylindrical connector.

Abstract: A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in the substrate of a workpiece is disclosed which may comprise, a multichamber laser system comprising, a first laser unit comprising, a first and second gas discharge chamber; each with a pair of elongated spaced apart opposing electrodes contained within the chamber, forming an elongated gas discharge region; a laser gas contained within the chamber comprising a halogen and a noble gas selected to produce laser light at a center wavelength optimized to the crystallization process to be carried out on the workpiece; a power supply module comprising, a DC power source; a first and a second pulse compression and voltage step up circuit connected to the DC power source and connected to the respective electrodes, comprising a multistage fractional step up transformer having a plurality of primary windings connected in series and a single secondary winding passing through each of the plur

Abstract: The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5 mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.

Abstract: The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5 mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.

Abstract: The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5 mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.