Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.

Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.

Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: A variable passive component is provided for fabrication on a microelectromechanical system (MEMS) device. A conductive portion is provided on a low-profile sliding dielectric sheet that cooperates with a conductive portion disposed on a substrate to provide a variable passive component. The passive component can be a variable inductor provided by moving a shorted spiral inductor formed on the dielectric sheet over a spiral inductor on the substrate with varying degrees of overlap causing varying inductance values. The passive component can be a variable capacitor that consists of a large conductive pad on a dielectric plate which slides over two adjacent pads on the substrate with varying overlap causing varying capacitance values.

Abstract: A variable passive component is provided for fabrication on a microelectromechanical system (MEMS) device. A conductive portion is provided on a low-profile sliding dielectric sheet that cooperates with a conductive portion disposed on a substrate to provide a variable passive component. The passive component can be a variable inductor provided by moving a shorted spiral inductor formed on the dielectric sheet over a spiral inductor on the substrate with varying degrees of overlap causing varying inductance values. The passive component can be a variable capacitor that consists of a large conductive pad on a dielectric plate which slides over two adjacent pads on the substrate with varying overlap causing varying capacitance values.

Abstract: A voice-activated microphone and transceiver system includes an interrogator unit for transmitting a signal, receiving a modulated signal, and demodulating the modulated signal such that the difference between the transmitted signal and the modulated signal correspond to a unique sound wave signal. An acoustically driven microphone unit is also included for receiving the signal from the interrogator unit, modulating the signal with the sound wave signal, wherein the sound wave signal contains instructions for controlling an electronic device, and transmitting the modulated signal back to the interrogator unit for analysis by a signal processor.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: An adjustable surface acoustic wave (SAW) transducer is fabricated on a piezoelectric substrate. The adjustable SAW transducer includes a plurality of SAW interdigital transducer (IDT) fingers disposed on the substrate. Miniature switches are used to provide a plurality of interconnection patterns between the SAW IDT fingers such that a plurality of SAW characteristics can be generated from a single set of SAW IDT fingers.

Abstract: An RF switch and a process for fabricating an RF switch which includes multiple throws and can be fabricated utilizing only a single layer of metallization. The switch in accordance with the present invention includes an airbridge suspended beam disposed adjacent to one or more metal traces. One or more control pads are disposed adjacent to the airbridged suspended beam to operate the switch electrostatically. The suspended beam as well as the metal traces and contact pads are all fabricated with a single metallization layer. The switch is configured such that deflection of the beam is in a plane generally parallel to the plane of the substrate. By eliminating multiple metallization layers, the complexity for fabricating the switch is greatly reduced. Moreover, the switch configuration also allows multiple throws and multiple poles using a single level of metallization.

Abstract: A low frequency mechanical resonator that resonates at relatively low frequencies and can be fabricated as part of an integrated circuit. The resonator includes a piezoelectric structure having a top piezoelectric layer and a bottom piezoelectric layer positioned over a recessed area in a substrate. A top input electrode is positioned on the top surface of the top piezoelectric layer, a middle shield electrode is positioned between the piezoelectric layers, and a bottom output electrode is positioned on the bottom surface of the bottom piezoelectric layer adjacent the recessed area. By applying an appropriate alternating current to the top electrode, the top piezoelectric layer is alternately contracted and expanded. Because the top piezoelectric layer is secured to the bottom piezoelectric layer, the piezoelectric structure will flex up and down in order to relieve stress within the structure.

Abstract: Disclosed is a thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR). A piezoelectric film is positioned between a first electrode and a second electrode and positioned adjacent a semiconductor substrate containing a via hole. A variable voltage source applies a DC bias voltage to the electrodes which causes an electric field to be created between the electrodes within the piezoelectric film. The resulting electric field causes the piezoelectric film to resonate at a frequency different than its unbiased resonant frequency. By adjusting the variable voltage source to change the DC bias voltage, the resonant frequency from the thin film semiconductor bulk acoustic resonator (SBAR) can be varied.

Abstract: This invention discloses a monolithic multipole stacked crystal filter comprised of a series of cascaded 2-port semiconductor bulk acoustic resonator stacked crystal filters electrically cascaded and a shunt inductor connected between each of the 2-port filters. Each of the 2-port filters including a first and second piezoelectric layer, typically aluminum nitride. A first input electrode is positioned on a top surface of one of the piezoelectric layers and a second output electrode is positioned on a bottom surface of the other of the piezoelectric layers. A ground electrode is positioned between the piezoelectric layers. In this regard, the piezoelectric layers will resonate at a resonant frequency and provide bandpass filter characteristics. The complete monolithic multipole filter provides control of the passband shape which yields highly desirable filter characteristics.

Abstract: This invention discloses a semiconductor bulk acoustic resonator including at least one thin film piezoelectric layer positioned on a semiconductor substrate. The acoustic resonator includes a heating ring positioned around the outer perimeter of the piezoelectric layer in order to heat the piezoelectric layer to a desirable elevated temperature. A heat sensing film fabricated on the piezoelectric layer monitors the temperature of the piezoelectric layer such that the heating ring maintains the piezoelectric layer at a constant temperature. By this, an oscillator circuit using this semiconductor bulk acoustic resonator as the frequency controlling element can maintain a constant frequency over a wide range of temperatures which may affect frequency stability.

Abstract: A surface acoustic wave (SAW) chirp signal processor having a piezoelectric substrate, an array of input transducers and an array of output transducers. In its chirp compression mode, the device has chirp signals applied in parallel to its input transducers and produces compressed output pulses at its output transducers, corresponding to selected chirp rates. The input transducers are successively offset with respect to a focal point on the array of output transducers, by distances that successively and linearly increase or decrease from transducer to transducer, consistent with the increase or decrease in the wavelength of the chirp signals. The device may also be used in a pulse expansion mode, by inputting a broadband pulse into a selected one of the output transducers. The input transducers then produce a chirp signal having a rate corresponding the selected to output transducer.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.