Abstract: Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400° C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ambient or a nitrogen ambient including an oxygen concentration of less than about 1 to about 10 parts per billion.

Abstract: A superconducting device operable at temperatures in excess of 30° K. and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high Tc superconducting material, the SQUID device being operable at temperatures in excess of 60° K. High energy beams, for example ion beams, are used to convert selected portions of the high Tc superconductor to nonsuperconductive properties so that the material now has both superconductive regions and nonsuperconductive regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits. good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: In a Field Effect Transistor (FET) with a semiconductor channel the use of a high Tc oxide superconductor material in the gate electrode provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.

Abstract: High K dielectric materials having very low leakage current are formed by depositing a thin amorphous layer of a high K dielectric and a crystalline layer of a high K dielectric over the amorphous layer. Semiconductor devices including composite high K dielectric materials, and methods of fabricating such devices, are also disclosed.

Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: An IC including a resistor which is coupled to a metal wiring level through metal contacts, said resistor including a discrete metal-insulator-metal stack, wherein said metal contacts are in contact to one of said metals of said film stack. In the above IC design, current flows laterally through either the top metal electrode, the bottom metal electrode, or both, and any unused electrode is disconnected from the circuit.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalLine material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: An IC including a resistor which is coupled to a metal wiring level through metal contacts, said resistor including a discrete metal-insulator-metal stack, wherein said metal contacts are in contact to one of said metals of said film stack. In the above IC design, current flows laterally through either the top metal electrode, the bottom metal electrode, or both, and any unused electrode is disconnected from the circuit.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

Abstract: A structure and method for providing an interface with an oxide surface which exhibits both high adhesion and preferred electrical properties. The method involves providing a partial layer of a first material, chosen for its electrical properties, whereby the partial layer has openings through which areas of the oxide surface are exposed. Provision of the partial layer is followed by deposition of a continuous layer of a second material, selected for its preferred physical interface properties, i.e., adhesion. The continuous layer of the second material is deposited over the partial layer including the exposed areas of the oxide surface. The second material will adhere to the exposed areas of oxide, while the first material will provide a discrete interface with the oxide.

Abstract: High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

Abstract: A capacitor and method of making is described incorporating a semiconductor substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and a high dielectric constant material such as barium or lead titanate may form the dielectric. The silicate layer may be formed by evaporating and diffusing, ion implanting, or electroplating and diffusing barium or lead. The high epsilon dielectric constant material may be formed by sol gel deposition, metal organic chemical vapor deposition or sputtering. The invention overcomes the problem of a bottom electrode and dielectric layer which chemically interact to form a silicon oxide layer in series or below the desired dielectric layer.