Patents by Inventor Robert Bicknell

Robert Bicknell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040109402
    Abstract: A storage device has a stator layer, an emitter layer, and a rotor layer. The rotor layer has a plurality of data clusters, each having a substrate which is electrically isolated from the other data clusters by a dielectric material. Another storage device has a means for electrically isolating a plurality of data clusters, each having phase change media coupled to a conductive substrate, from each other. The storage device also has a means for reading a differential signal from each of the data clusters based on currents which flow from the phase change media to the conductive substrate in each data cluster. A method of electrically isolating conductive regions on a micromover device is also provided.
    Type: Application
    Filed: December 5, 2002
    Publication date: June 10, 2004
    Inventors: Robert Bicknell-Tassius, Gary R. Ashton
  • Patent number: 6576318
    Abstract: A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer over a substrate, forming a thick capping layer over the phase-change layer, changing the phase-change layer from an amorphous phase to a crystalline phase, removing the thick capping layer, and forming a thin capping layer over the phase-change layer.
    Type: Grant
    Filed: June 5, 2001
    Date of Patent: June 10, 2003
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Heon Lee, Robert Bicknell-Tassius
  • Publication number: 20020182363
    Abstract: A method of forming a crystalline, phase-change layer that remains atomically smooth on its surface. Also, an atomically smooth, crystalline, phase-change layer made according to this method. The method can include forming a phase-change layer over a substrate, forming a thick capping layer over the phase-change layer, changing the phase-change layer from an amorphous phase to a crystalline phase, removing the thick capping layer, and forming a thin capping layer over the phase-change layer.
    Type: Application
    Filed: June 5, 2001
    Publication date: December 5, 2002
    Inventors: Heon Lee, Robert Bicknell-Tassius