Patents by Inventor Robert Bondokov

Robert Bondokov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Large aluminum nitride crystals with reduced defects and methods of making them
    Patent number: 11225731
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: January 18, 2022
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20170145592
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Application
    Filed: February 8, 2017
    Publication date: May 25, 2017
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Large aluminum nitride crystals with reduced defects and methods of making them
    Patent number: 9598791
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: March 21, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20160208417
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Application
    Filed: March 25, 2016
    Publication date: July 21, 2016
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20140093671
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104cm?3.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 3, 2014
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Large aluminum nitride crystals with reduced defects and methods of making them
    Patent number: 8580035
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: November 12, 2013
    Assignee: Crystal IS, Inc.
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Large aluminum nitride crystals with reduced defects and methods of making them
    Publication number: 20070134827
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Application
    Filed: November 28, 2006
    Publication date: June 14, 2007
    Inventors: Robert Bondokov, Kenneth Morgan, Glen Slack, Leo Schowalter
  • Method and apparatus for producing large, single-crystals of aluminum nitride
    Publication number: 20070101932
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Application
    Filed: May 9, 2006
    Publication date: May 10, 2007
    Applicant: Crystal IS, Inc.
    Inventors: Leo Schowalter, Glen Slack, J. Rojo, Robert Bondokov, Kenneth Morgan, Joseph Smart