Abstract: A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.

Abstract: A glass element having a thickness from 25 ?m to 125 ?m, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress ?I of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm.