Abstract: The instant invention pertains to a multi-layer tamper proof electronic coating wherein the first layer is a protecting layer produced from preceramic silicon containing material and at least one filler. The second layer is a resin sealer coat produced from a sealer resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides and parylenes. An optional third layer is a cap coating layer selected from SiO.sub.2 coating, SiO.sub.2 /ceramic oxide coating, silicon containing coatings, silicon carbon containing coatings, silicon nitrogen containing coatings, silicon oxygen nitrogen coatings, silicon nitrogen carbon containing coatings and/or diamond like coatings.

Abstract: Disclosed is a method of increasing the adhesion between gold and silica derived from hydrogen silsesquioxane resin. The method comprises joining the gold and silica followed by annealing under an oxidizing atmosphere.

Abstract: A method and composition for joining flip chips back-side-up with respect to substrates by applying an adhesive between the active side of the flip chip and the substrate. The adhesive is a conductive silicone pressure sensitive adhesive containing (i) a silicone resin, (ii) a siloxane gum, (iii) a conductive particulate material, and optionally, (iv) a peroxide catalyst. Suitable conductive particulate materials are silver-clad glass fibers; spherical gold particles; spherical hollow glass microspheres coated with silver, gold, nickel, or copper; or spherical particles of metal alloys of Sn/Cu, Pb/Sn, or Au/Sn. The adhesive can be applied as a ball or bump itself, in conjunction with a solder ball or bump, or in the form of tape sandwiched between the flip chip and substrate.

Abstract: A low temperature method of forming silica-containing ceramic coatings on substrates in which a coating containing hydrogen silsesquioxane resin is applied on a substrate and exposed to an electron beam for a time sufficient to convert the hydrogen silsesquioxane resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.

Abstract: Disclosed is a method for forming improved Si-O containing coatings on electronic substrates. The method comprises heating a hydrogen silsesquioxane resin successively under wet ammonia, dry ammonia and oxygen. The resultant coatings have improved properties such as low dielectric constants.

Abstract: Disclosed are Si--O containing ceramics having a dielectric constant less than or equal to about 3.2 which is stable over time. These properties render the ceramics valuable on electronic substrates.

Abstract: The present invention relates to a method of forming composite coatings on electronic substrates and the substrates coated thereby. The method comprises applying a coating comprising hydrogen silsesquioxane resin and a refractory fiber on an electronic substrate and heating the coated substrate at a temperature sufficient to convert the hydrogen silsesquioxane resin into a ceramic.

Abstract: Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and a filler onto the electronic device, wherein the filler is one which reacts in an oxidizing atmosphere to liberate enough heat to damage the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.

Abstract: Disclosed is a method for forming improved Si--0 containing coatings on electronic substrate. The method comprises treating Si--0 containing ceramic coatings derived from hydrogen silsesquioxane resin with hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.

Abstract: Disclosed is a method of forming opaque coatings on integrated circuits. The method comprises selectively applying a coating of a silica precursor resin and a filler onto the integrated circuit and heating the coated circuit at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.

Abstract: To form a coating of silica on a substrate, the substrate is coated with a silica precursor having a melting point between about 50.degree. and about 450.degree. C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.